Read-Only Memories TRIZ Cases

A memory controller aborts remaining read commands in a FIFO queue upon successful ECC decoding.

Dynamic program start voltage adjustment prevents speed increases during repeated operations, keeping overall program time constant.

Nonvolatile memory retains delay tuning parameters for multiple memory ranks, eliminating repeated calibration during power up cycles.

A dynamic flash memory cell pillar structure controls voltages to enhance operational margins.

Dynamic connection units enable single-step bit line precharging in nonvolatile memory, eliminating two-step delays and improving operating speed.

Control circuitry reads individual bit values from shared charge-trapping layers using averaged or differential sensing currents.

A regulator adjusts internal resistance dynamically to output a target voltage from a pumping source.

Segmented reference currents detect charge loss early, narrowing margins to resolve the storage density versus data retention trade-off.

Dynamic read interval adjustment compensates for disparate charge accumulation rates across voltage polarities, reducing read operation failures.

Daisy chain circuits shift logical sums of fail information to enable rapid identification of defective memory cells.

A controller adjusts non-selected word line voltage based on the last written position to reduce supply current during memory reads.

Segmented terminal rows on a memory card substrate reduce signal noise and improve data stability by optimizing power supply paths.

A control circuit executes verify operations only on the lowest threshold voltage level during data write.

Distributed virtual cache architecture in NAND flash memory devices using separate registers for read and programming operations.

A flash memory device uses integrated BIST logic to autonomously detect and substitute failed cells with redundant structures.

Retention check logic detects threshold voltage degradation in non-volatile memory cells and triggers reprogramming to prevent charge leakage.

A flash memory controller analyzes uncorrectable partial data to generate representative values for error correction.

A page buffer circuit stepwise discharges precharged bit lines to manage voltage levels during program operations.

A semiconductor memory device segments bit lines to minimize active charging currents during programming operations.

Integrating a source line decoder with a column decoder reduces data line discharging time, improving read speed while managing device complexity.

A memory circuit uses parallel latch circuits and a data multiplexer to manage asynchronous data propagation.

Source-to-drain current testing of select gate transistors resolves bit line coupling interference while maintaining narrow threshold voltage distribution.

Continuous charge pump operation eliminates reset delays during NAND flash programming, preventing data loss without excessive holdup capacitors.

Single crystalline silicon channel layers in a 3D memory structure improve carrier mobility while insulating barriers reduce leakage current.

A read voltage generation circuit uses a counter to dynamically change codes during retry operations.

A storage controller aborts MLC programming and reconstructs data into single-level cell memory upon power loss detection.

A field programmable gate array switches to a direct mode for external reconfiguration of critical logic cells.

Controller chip schedules nonvolatile memory commands across time slots to reduce peak current demand.

Classifying memory cells by subthreshold slope and adjusting verify voltages reduces threshold voltage distribution widening caused by temperature changes.

A nonvolatile memory controller applies alternating word line erase verification followed by a high read-pass voltage scan to identify defective cells.

Shared source-drain pillars connect adjacent memory cells to reduce device area while maintaining fast access speed.

A decoder box evaluates flash memory wear and dynamically adjusts stream bitrate to extend storage lifetime.

A finFET antifuse uses a tapered channel to switch between open and short states.

Applying negative bias to unselected memory cells minimizes bit line leakage current, enhancing sensing speed in non-volatile memories.

A local X-decoder unselected erase detecting unit increases absolute voltage to float word lines with the well potential.

Symmetric bitline selection reduces worst-case voltage drop on wordlines, enabling parallel writing of multiple data with lower power dissipation.

A semiconductor memory device structure utilizes a plate line to shield floating bodies from word line interference.

A trimmable current reference generator adjusts partition factors and aspect ratios to maintain stable electrical conductivity across manufacturing deviations.

Storage circuitry tests a data portion of programmed memory blocks to verify programming status.

A one-time programmable memory cell uses a sense circuit to monitor fuse resistance during programming.

Control circuit applies weaker erasing level to adjacent word lines, limiting threshold voltage rise from capacitive coupling interference.

A single FeFET CAM cell reduces transistor count and search energy consumption through adaptive precharge control.

A voltage generator adjusts DC levels based on temperature to stabilize memory cell distributions.

A memory sub-system controller performs selective copyback operations using data validity and integrity checks to optimize storage management.

Pre-charging transistor bulk regions with a second negative voltage reduces program and verification operation time while stabilizing voltage margins.

A semiconductor memory device detects over-erased cells and raises their threshold voltages.

A control circuit determines initial program voltages for distinct word line zones in non-volatile memory arrays based on cycle counts.

A nonvolatile memory programming method applies segmented verification voltages to control threshold voltage distribution across multiple logic states.