Programmable Floating Backplate for SOI CMOS Voltage Control
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Solution Overview
Problem
In semiconductor-on-insulator (SOI) CMOS circuits, existing hard-wired backplates are not programmable, making it difficult to independently bias adjacent backplates to different voltages, which limits the versatility and performance of SOI devices.
Innovation Solution
The introduction of programmable floating backplates, where electrons can be injected into and erased from a buried floating conductive material portion using a switchable voltage supply system, allowing for individual voltage programming and tuning of field effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If hard-wired backplates are used, then electrical bias can be applied to backplates, but it is cumbersome to have adjacent backplates electrically biased at different voltages
Solution Approach 1:
The patent changes the electrical state of the backplate from a fixed hard-wired connection to a programmable floating node. By injecting or removing electrons from the floating backplate, the voltage potential can be dynamically adjusted without requiring complex external circuitry for each backplate, thus achieving versatile voltage control while simplifying the overall device structure.
Solution Approach 2:
The patent uses a simplified model where the backplate voltage is controlled by controlling the number of electrons on the floating backplate. This electron count control acts as a copy or representation of the desired voltage state, allowing indirect control of voltage through electron injection/extraction rather than direct electrical connection control.
2Reliability
If hard-wired backplates are used, then backplate voltage can be applied, but dedicated electrical circuits are required for each backplate
Solution Approach 1:
The patent extracts the voltage control function from the traditional hard-wired electrical connection and relocates it to the floating backplate itself. By making the backplate electrically isolated (floating) and controlling its electron population, the voltage control capability is embedded within the backplate structure rather than requiring external dedicated circuits.
Solution Approach 2:
The floating backplate serves itself by maintaining its own voltage potential through its electron population. Once electrons are injected or removed, the backplate maintains its voltage state autonomously without requiring continuous external circuit support, enabling self-sustaining voltage control.
3Adaptability or versatility
If electrons are injected into floating backplate for programming, then voltage control is achieved, but electron injection mechanism is required
Solution Approach 1:
The patent replaces traditional electrical connection mechanisms with a quantum mechanical effect - electron injection and extraction. Instead of using physical wire connections to control voltage, the system uses electron tunneling or hot carrier injection mechanisms to program the floating backplate voltage, leveraging quantum effects for control.
Solution Approach 2:
The patent performs electron injection or extraction in advance to program the desired voltage state on the floating backplate before the device operates. This preliminary programming action sets up the voltage conditions needed for subsequent device operation, allowing the backplate to be pre-configured for specific voltage requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more versatile voltage control, improving device performance by allowing each backplate to be set to a desired voltage without dedicated electrical circuits, thereby enhancing the balance between nFET and pFET drive currents and neutralizing the effects of trapped electrical charges in the BOX layer.
Implementation Method 1
The p-type injector field effect transistor is configured to generate hot electrons having sufficient energy to pass though the second buried insulator layer and to flow into the buried floating conductive material portion
Implementation Method 2
The at least one voltage has a magnitude that is high enough to induce tunneling of electrons though the second buried insulator layer into or out of the buried floating conductive material portion
Data Source
AI summary
SOI CMOS structures having at least one programmable electrically floating backplate are provided. Each electrically floating backplate is individually programmable. Programming can be performed by injecting electrons into each conductive floating backplate. Erasure of the programming can be accomplished by tunneling the electrons out of the floating backplate. At least one of two means can accomplish programming of the electrically floating backgate. The two means include Fowler-Nordheim tunneling, and hot electron injection using an SOI pFET. Hot electron injection using pFET can be done at much lower voltage than injection by tunneling electron injection.