Programmable Semiconductor Device with Quantum Well Charge Trapping
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Solution Overview
Problem
Current programmable semiconductor devices require higher operating voltages and larger footprints, making them unsuitable for applications like neuromorphic computing that demand low power consumption and high memory density.
Innovation Solution
A semiconductor device with a junction and quantum well elements that support charge trapping, allowing for adjustable built-in potential and programmable response, eliminating the need for additional diodes and reducing operational voltages and footprints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional programmable semiconductor devices are used, then programming capability is achieved, but device footprint and power consumption increase
Solution Approach 1:
The patent combines the programming function and memory function into a single semiconductor device structure. The quantum well element is integrated within the semiconductor device, allowing charge trapping for programming while eliminating the need for separate diodes or memory cells. This merging reduces the overall device footprint while maintaining programmable capability.
Solution Approach 2:
The semiconductor device performs multiple functions: it provides rectification through the junction, charge trapping through the quantum well element, and programmable response modulation. This multi-functionality eliminates the need for additional dedicated programming components, thereby reducing device footprint while achieving adaptability.
2Adaptability or versatility
If conventional programmable semiconductor devices are used, then programming capability is achieved, but power consumption increases
Solution Approach 1:
The patent combines the programming function and memory function into a single semiconductor device structure. The quantum well element is integrated within the semiconductor device, allowing charge trapping for programming while eliminating the need for separate diodes or memory cells. This merging reduces the overall device footprint while maintaining programmable capability.
Solution Approach 2:
The semiconductor device performs multiple functions: it provides rectification through the junction, charge trapping through the quantum well element, and programmable response modulation. This multi-functionality eliminates the need for additional dedicated programming components, thereby reducing device footprint while achieving adaptability.
3Adaptability or versatility
If additional diodes are added for programming, then programmable capability is improved, but device complexity increases
Solution Approach 1:
The patent combines the programming function and memory function into a single semiconductor device structure. The quantum well element is integrated within the semiconductor device, allowing charge trapping for programming while eliminating the need for separate diodes or memory cells. This merging reduces the overall device footprint while maintaining programmable capability.
Solution Approach 2:
The semiconductor device performs multiple functions: it provides rectification through the junction, charge trapping through the quantum well element, and programmable response modulation. This multi-functionality eliminates the need for additional dedicated programming components, thereby reducing device footprint while achieving adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables memory and processing capabilities with small footprint and low power consumption, suitable for diverse applications, including neuromorphic computing, by modulating the built-in potential and trapping charges within the semiconductor device.
Implementation Method 1
a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping
Implementation Method 2
The built-in potential of the junction is increased or reduced depending on the net polarity of the trapped charge
Data Source
AI summary
An apparatus with a programmable response includes a semi-conductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semi-conductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.