3D SiP Protrusion E-Bar for Interconnect and Shielding
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Solution Overview
Problem
Semiconductor devices in high-frequency applications, such as RF wireless communications, face interference issues due to electromagnetic interference (EMI), radio frequency interference (RFI), and inter-device interference, which can affect their operation and reliability.
Innovation Solution
The implementation of a 3D integrated system-in-package (SiP) with conductive posts as protrusions (protrusion e-bar) around semiconductor die, providing vertical and horizontal electrical interconnects, encapsulant support, and shielding to reduce interference and enhance structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a narrow gap is maintained between the first substrate and second substrate to reduce encapsulant flow, then encapsulant leakage is minimized, but void formation increases and reliability decreases
Solution Approach 1:
A protrusion structure (e-bar) is introduced as an intermediary element between the first substrate and second substrate. This e-bar protrudes from the first substrate toward the second substrate, creating a controlled flow path for the encapsulant while maintaining adequate spacing. The e-bar acts as a mediator that guides encapsulant flow without requiring an excessively narrow gap, thereby preventing void formation while still containing the encapsulant within the package structure.
2Adaptability or versatility
If conductive posts are added around semiconductor die for vertical and horizontal electrical interconnects, then electrical functionality is enhanced, but device complexity increases
Solution Approach 1:
The protrusion e-bar structure serves multiple functions simultaneously: it provides vertical electrical interconnect between substrates, offers horizontal electrical connection paths around the semiconductor die, and acts as a structural support element. By combining these multiple functions into a single integrated feature, the design achieves enhanced electrical adaptability without proportionally increasing overall device complexity.
Solution Approach 2:
The patent merges the functions of separate conductive posts and interconnect structures into a unified protrusion e-bar feature. This consolidation integrates vertical and horizontal electrical interconnect capabilities into a single structural element, reducing the number of discrete components needed while maintaining comprehensive electrical connectivity around the semiconductor die.
3Object-affected harmful factors
If shielding structures are implemented to reduce electromagnetic interference, then signal integrity is improved, but manufacturing complexity increases
Solution Approach 1:
The shielding function is merged with the existing protrusion e-bar structure rather than being implemented as a separate component. The e-bar is configured to provide both electrical interconnect and electromagnetic shielding, combining multiple protective functions into a single manufacturing step and structural element, thereby reducing overall manufacturing complexity while maintaining EMI protection.
Data Source
AI summary
A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.