Curve-Fitting Proximity Effect Parameters for Non-Rectangular Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current device models fail to accurately account for sub-wavelength lithographic distortions in non-rectangular semiconductor structures, affecting the electrical characteristics of transistor devices such as threshold voltage and leakage current due to complex nonlinear relationships with gate shape.
Innovation Solution
A curve-fitting procedure is employed to determine proximity effect device parameters using location-dependent weighting factors for accurate extraction of equivalent gate length (EGL) in non-rectangular semiconductor structures, incorporating two-dimensional and three-dimensional device simulations to improve the accuracy of electrical characteristic estimation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional device models are used for sub-wavelength lithographic patterns, then manufacturing process is simple, but manufacturing precision deteriorates due to inaccurate electrical characteristic estimation
Solution Approach 1:
The patent transforms the complex 3D non-rectangular gate structure into an equivalent 2D rectangular structure by introducing an equivalent gate length parameter. This parameter transformation allows conventional 2D device models to accurately represent 3D structures, improving electrical characteristic estimation without requiring complex 3D models
Solution Approach 2:
The patent creates a simplified 2D copy of the 3D non-rectangular gate structure that preserves the essential electrical characteristics. By extracting an equivalent gate length from the 3D structure and using it in a 2D model, the system replicates the electrical behavior accurately while avoiding the complexity of full 3D modeling
2Measurement precision
If 3D device simulations are performed for non-rectangular structures, then electrical characteristic accuracy is improved, but computational complexity and processing time increase significantly
Solution Approach 1:
The patent reduces the problem from three dimensions to two dimensions by projecting the 3D non-rectangular gate structure onto a 2D plane and extracting an equivalent gate length. This dimensional reduction enables the use of faster 2D device models while maintaining accuracy, avoiding the computational burden of full 3D simulations
3Measurement precision
If conventional EGL extraction methods are used, then extraction process is simple, but accuracy deteriorates with a relative difference of 40% between 2D and 3D simulations
Solution Approach 1:
The patent segments the non-rectangular gate structure into rectangular regions and applies weighting factors to each segment. This segmentation approach allows accurate extraction of the equivalent gate length by considering the contribution of each segment, achieving high accuracy without requiring complex iterative optimization methods
Data Source
AI summary
The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.