PSTO MTJ Tunnel Barrier Oxidation for Low RA and Stable PMA
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Solution Overview
Problem
Current Magnetic Tunneling Junction (MTJ) technologies face challenges in achieving low resistance-area (RA) products for good writability and reliability while maintaining interfacial perpendicular anisotropy, particularly in Spin-Torque MRAM devices, where the oxidation process can lead to overoxidation and loss of perpendicular magnetic anisotropy (PMA) in magnetic layers.
Innovation Solution
A method for forming MTJ elements with a tunnel barrier using a composite metal oxide structure, where a first metal layer is subjected to passive oxidation with low oxygen pressure, followed by conventional oxidation steps to form a laminated oxide structure, minimizing oxidation of adjoining magnetic layers and enhancing PMA, thereby reducing RA and increasing the Tunnel Magneto-Resistance (TMR) ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxidation process is used to form tunnel barrier, then low RA product is achieved for good writability, but perpendicular magnetic anisotropy (PMA) is lost in magnetic layers
Solution Approach 1:
The oxidation process is divided into multiple sequential steps with different oxygen pressures and durations. The first step uses low oxygen pressure (1-10 mtorr) for a short duration (5-30 seconds) to form an initial oxide layer, followed by a second step with higher oxygen pressure (50-100 mtorr) for longer duration (60-300 seconds) to complete the oxidation. This segmented approach prevents overoxidation of magnetic layers while achieving the desired low RA product.
Solution Approach 2:
The oxidation process parameters (oxygen pressure, temperature, duration) are precisely controlled and changed between steps. The first oxidation step uses oxygen pressure of 1-10 mtorr at room temperature for 5-30 seconds, then the second step uses 50-100 mtorr at room temperature for 60-300 seconds. This parameter control ensures sufficient oxidation for low RA while preventing PMA loss.
2Reliability
If oxidation process is extended to reduce RA further, then writing reliability improves, but oxidation of magnetic layers increases causing PMA degradation
Solution Approach 1:
The first oxidation step is performed as a preliminary action before the second oxidation step. This initial oxidation at low oxygen pressure (1-10 mtorr) for 5-30 seconds creates a controlled oxide layer that prevents excessive oxygen penetration into magnetic layers during the subsequent second oxidation step, thereby preventing PMA degradation while still achieving low RA.
Solution Approach 2:
The oxidation is performed in two stages where the first stage applies partial oxidation (low oxygen pressure for short time) and the second stage completes the oxidation (higher oxygen pressure for longer time). This partial then complete approach ensures sufficient oxidation for low RA without excessive oxidation that would degrade PMA in magnetic layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach preserves PMA in magnetic layers, leading to improved writing performance and reliability by reducing RA and enhancing TMR ratio, making the MTJ elements suitable for advanced MRAM and Spin-Torque MRAM devices.
Implementation Method 1
a first metal layer is subjected to passive oxidation with low oxygen pressure, followed by conventional oxidation steps
Implementation Method 2
the spin angular moment of electrons incident on a magnetic layer interacts with magnetic moments of the magnetic layer near the interface between the magnetic layer and non-magnetic spacer. Through this interaction, the electrons transfer a portion of their angular momentum to the magnetic layer
Implementation Method 3
one or both of the reference layer and free layer has perpendicular magnetic anisotropy (PMA), the tunnel barrier contributes to the write function by generating spin polarized current
Data Source
AI summary
A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistanceĆarea value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.


