PTC Device Diode Integration for Overvoltage Protection
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Solution Overview
Problem
Conventional circuit protection devices with PTC devices fail to timely provide overvoltage protection due to inefficient heat conduction from diodes, are labor-intensive to manufacture, and have a large, non-compact structure, making them unsuitable for mass production.
Innovation Solution
A circuit protection device with a PTC device and diode configuration, where vias thermally and electrically connect the diode and PTC device electrodes through insulation layers, allowing for compact design and simplified manufacturing via surface mounting technology, enabling timely overcurrent and overvoltage protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If heat is conducted from diode to PTC device in conventional circuit protection devices, then overvoltage protection can be provided, but the heat conduction is inefficient and response time is delayed
Solution Approach 1:
The diode and PTC device are merged into a single integrated structure where the diode is formed directly on the PTC device substrate. This integration eliminates the need for separate heat conduction paths through insulation layers and via holes, enabling direct thermal coupling between the diode and PTC device, thus achieving rapid response to overvoltage conditions.
Solution Approach 2:
The patent transitions from a planar arrangement with separate components to a three-dimensional integrated structure where the diode is formed vertically on the PTC device. This dimensional change enables direct thermal and electrical coupling through shared substrate pathways, significantly improving heat conduction efficiency and response time.
2Ease of manufacture
If wires are used to lead out electrodes and weld connections are made, then electrical connections are established, but the manufacturing process becomes labor-intensive and time-consuming
Solution Approach 1:
The patent replaces manual wire bonding and welding operations with automated semiconductor manufacturing processes. The diode is formed directly on the PTC device substrate using standard semiconductor fabrication techniques, eliminating the need for mechanical wire manipulation and welding, thus enabling high-volume automated production.
Solution Approach 2:
The integrated structure allows the diode and PTC device to be manufactured together in a single fabrication process sequence. The diode formation process inherently creates the electrical and thermal connections, eliminating the need for separate connection steps and reducing overall manufacturing complexity.
3Device complexity
If conventional circuit protection device structure is used, then components are connected, but the device has large contour and non-compact structure
Solution Approach 1:
The diode is nested within the same substrate as the PTC device, with the diode structure formed directly on top of the PTC device layers. This nesting arrangement eliminates the need for separate mounting areas and interconnection structures, significantly reducing the overall device footprint and achieving a compact configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables rapid temperature increase of the PTC device in response to overcurrent or overvoltage, effectively protecting the circuit while simplifying production and reducing device size, enhancing manufacturing efficiency and compactness.
Implementation Method 1
vias extending through the first insulation layer thermally and electrically connecting the first electrode surface of the diode and the first electrode surface of the PTC device
Implementation Method 2
a PTC device having a first electrode surface and a second electrode surface opposite to the first electrode surface of the PTC device
Data Source
AI summary
A circuit protection device including a PTC device and a diode. A first insulation layer is formed between first electrode surfaces of the diode and the PTC device. Vias for thermally and electrically connecting the first electrode surfaces of the diode and the PTC device are formed in the first insulation layer. First, second, and third external electrode pads are provided on a second insulation layer formed on the second electrode surface of the PTC device. The second electrode surface of the PTC device is electrically connected to the first external electrode pad. The first electrode surface of the diode and the first electrode surface of the PTC device are electrically connected to the second external electrode pad. A second electrode surface of the diode is electrically connected to the third external electrode pad.