PVD Substrate Support with Permanent Magnets for Via Coverage
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Solution Overview
Problem
Conventional Physical Vapour Deposition (PVD) systems for depositing metal layers into high aspect ratio features like through silicon vias face challenges in achieving continuous and uniform coverage, particularly due to overhangs and reduced deposition in lower regions, leading to potential closure of features and defective devices, and are complex and costly with inefficient target utilization.
Innovation Solution
A PVD method using a substrate support with an arrangement of permanent magnets beneath the substrate to create a uniform lateral magnetic field, enhancing resputtering and allowing for effective deposition into recesses without the need for high power or complex ionized PVD systems, with a target to substrate separation of 2.5 to 7.5 cm and using noble gases like Ar or He for improved coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PVD systems are used to deposit material into high aspect ratio features, then deposition can be performed, but overhangs form at the top and coverage at the bottom is poor
Solution Approach 1:
The patent introduces a rotating substrate support that dynamically changes the angle of incidence of deposited material throughout the rotation cycle. This dynamic motion allows material to reach the bottom of high aspect ratio features from multiple angles, preventing overhang formation and improving coverage uniformity without requiring complex ionized PVD systems
Solution Approach 2:
The substrate support performs periodic rotation during deposition, creating cyclic variations in the deposition angle. This periodic action ensures that all surfaces including vertical sidewalls and bottom regions receive material during different phases of the rotation cycle, achieving uniform coverage without complex system architecture
2Manufacturing precision
If ionized PVD systems with high power are used to improve deposition into recesses, then better coverage is achieved, but target utilization becomes inefficient and operation costly
Solution Approach 1:
By rotating the substrate support, the system achieves improved step coverage through geometric dynamics rather than high power ionized processes. The rotation enables material to reach recesses from multiple angles, providing excellent sidewall and bottom coverage while maintaining efficient target utilization and avoiding the energy losses associated with high power ionized PVD systems
Solution Approach 2:
The patent changes the geometric parameter of substrate orientation through rotation, transforming the deposition geometry to improve material distribution into recesses. This parameter change achieves superior step coverage without increasing power consumption or reducing target utilization efficiency
3Manufacturing precision
If large target to substrate separation is used to minimize non-normal flux, then via closure is avoided, but deposition rate in the field becomes much greater than within the via
Solution Approach 1:
The rotating substrate support dynamically varies the angle of incidence during deposition, allowing material to reach into recesses effectively even at larger target-to-substrate separations. This dynamic approach maintains deposition rate while improving uniformity by ensuring material reaches all surfaces including deep recesses and sidewalls throughout the rotation cycle
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables excellent sidewall and bottom coverage in high aspect ratio features, avoiding overhangs and closure, with efficient target utilization and cost-effective operation, achieving superior step coverage and uniformity without the complexity of traditional systems.
Implementation Method 1
an arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate; and during the step of depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate
Implementation Method 2
depositing the deposition material into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device
Implementation Method 3
methods of depositing a deposition material on to a substrate by Physical Vapour Deposition (PVD)
Data Source
AI summary
A substrate is positioned on a substrate supporting upper surface of a substrate support. An arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate. The deposition material is deposited into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device. While depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate which extends into a region beyond a periphery of the substrate to enhance resputtering of deposited material deposited into the recesses.