Electric Discharge Tubes TRIZ Cases

Adjustable curvature of the opposing field grid compensates for crossover displacement, ensuring accurate detection of threshold energy particles.

Segmenting the actuator assembly allows easy maintenance while active damping reduces image blur from environmental vibration.

Nozzles on a plasma generation element direct ablative plasma to bridge dielectric gaps, enabling reliable arc elimination across longer clearances.

A remote plasma system uses a pressure control device to pulse excited species without extinguishing the plasma.

Plasma etching process corrects deformed mask shapes using a dedicated second gas step.

Circular pattern fracturing via charged particle beam writers reduces Mask Error Enhancement Factor while improving contact accuracy at sub-80 nm half pitches.

A permanent magnet arrangement generates a uniform lateral magnetic field that enhances resputtering, preventing via closure in high aspect ratio features.

Reducing the gas injection hole region increases active species concentration at the outer peripheral portion, resolving non-uniform film thickness issues.

Insulating layer on vacuum chamber edge prevents abnormal discharge between workpiece and conductive chamber, maintaining processing reliability.

A heat-transfer sheet with specific thermal conductivity stabilizes the temperature of a ceiling electrode plate during plasma etching.

A gas intake device with a mixing box and buffer plate distributes gases uniformly into the vacuum chamber.

Plasma bombardment controls silicon nitride film properties for selective wet etching in trench structures.

A secondary electrode generates a repulsive field that redirects particle trajectories, preventing wafer contamination during continuous ion implantation.

A controller transports a cooled dummy substrate to the heated support apparatus to accelerate thermal reduction.

Central target support prevents bowing while dual-axis magnet rotation ensures uniform power distribution across the sputter target surface.

A charged-particle exposure tool adjusts dose values of neighboring image elements to compensate for defective blanking apertures.

Molded connecting element guides data lines through recesses to integrated conductors.

A reusable electrostatic chuck preserves underlying electrodes by removing only the damaged upper dielectric layer and depositing a new coating.

Inclined side part creates a gap that allows lateral plug withdrawal, preventing terminal damage in synthetic resin housings.

Unified control merges separate positioning systems to automate LINAC and phantom motion, cutting manual setup time and expanding measurement types.

Vibrating wafers on electrostatic chucks induces current for precise residual charge calculation, preventing wafer damage during plasma processing.

Magnetic field constrains electron motion to reduce wall sputtering and enable stable high-density plasma generation.

A charged particle beam system uses a reference aperture to define beam geometry before switching to a working aperture for processing.

Selective shorting of coil antenna turns reduces inductance, enabling higher power supply and larger processing volume to overcome foldback and improve DRE.

Grid assembly distributes ion beamlets across the substrate surface to maintain temperature below 100C while increasing throughput.

A charged particle beam apparatus integrates a practice function that displays simulation images based on user-set control conditions.

A movable ground electrode optimizes ion beam current across energy ranges by dynamically adjusting electrode separation to prevent arcing.

Voltage polarity reversal between plasma phases inhibits particle formation on the substrate surface during etching.

Apply AC voltage to charged particle beam aperture so the image changes concentrically, resolving annular aperture positioning difficulty.

A capacitively-coupled plasma etching method uses chlorine gas to decompose ammonium fluorosilicate by-products during silicon nitride processing.

Dynamic plasma power adjustment during etching cycles improves selectivity between target and masking layers without increasing process complexity.

Guide grooves and abutments in rearward cavities allow 90 or 180 degree rotation, enabling individual contact element exchange without unsoldering.

Replacing low volatility gases with ethanol vapor eliminates contamination and corrosion while maintaining signal amplification for liquid imaging.