Sputter Source Central Target Support and Dual-Axis Magnet Rotation

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Solution Overview

Problem

Conventional sputter sources with a multi-axis rotational scheme provide uneven power distribution to the sputter target, leading to non-uniform sputtering and cause the target to bow, limiting its thickness and useful life.

Innovation Solution

A sputter source design with a first enclosure supporting a target centrally, using a magnet assembly with dual rotational actuators for precise magnet movement, ensuring uniform power distribution and minimizing target bowing through central support.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If power is provided to the sputter target from a non-central position using conventional multi-axis rotational scheme, then the magnetron can be positioned, but the power distribution across the sputter target becomes uneven and non-symmetrical, causing non-uniform sputtering

Engineering Contradiction:
Improvemagnetron positioning capabilityVSAvoidpower distribution uniformity
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent applies asymmetry by positioning the power feed off-center relative to the sputter target, specifically at a location that compensates for the rotational motion of the magnetron. This asymmetric power feed position, combined with the rotational scheme, creates symmetric power distribution across the target surface during rotation, resolving the contradiction between operational flexibility and manufacturing precision.

Inventive Principle:
Principle #4Asymmetry

2Ease of operation

If the sputter target is supported about a peripheral edge, then the target can be held in place, but the target bows during processing, limiting thickness and useful life

Engineering Contradiction:
Improvetarget support and positioningVSAvoidtarget flatness
Core Design Contradiction:
Ease of operationVSStability of the object's composition

Solution Approach 1:

The patent transitions from peripheral edge support (one-dimensional support point) to central support (two-dimensional distributed support area). By moving the support location from the periphery to the center of the target and using a support structure that distributes the load across multiple points in the central region, the target maintains its flatness during processing, eliminating bowing while preserving positioning capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Strength

If the sputter target is supported from the center, then target bowing is minimized and thickness can be increased, but the structural support system becomes more complex

Engineering Contradiction:
Improvetarget thickness and useful lifeVSAvoidsupport structure complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent integrates multiple functions into the central support structure: it provides mechanical support for the heavy target, enables precise positioning, maintains target flatness during rotation, and facilitates easy replacement. By combining these functions into a single multi-functional support mechanism located at the center, the patent achieves enhanced target strength and thickness without proportionally increasing overall system complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design achieves more precise sputtering, increased target thickness, and longer useful life by providing uniform power distribution and preventing target bowing.

Implementation Method 1

a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Implementation Method 2

an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure

Methodology Applied
Scientific EffectPlasma generation: Plasma

Data Source

PatentUS9580795B2Sputter source for use in a semiconductor process chamber
Publication Date: 2017.02.28 APPLIED MATERIALS INC
  • US9580795B2 patent drawing
  • US9580795B2 patent drawing
  • US9580795B2 patent drawing

AI summary

In some embodiments, a sputter source for a process chamber may include: a first enclosure having a top, sides and an open bottom; a target coupled to the open bottom; an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure; a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure; a first rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about the central axis of the first enclosure; and a second rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about a central axis of the magnet assembly.