Methods for crystal growth by replacing a sublimated target source material with a candidate source material
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Solution Overview
Problem
Traditional physical vapor transport (PVT) methods for crystal growth are limited by the size and quality of the crystals produced, as the sublimation of powders leads to carbon enrichment, reducing the sublimation rate and causing defects in the grown crystals.
Innovation Solution
A method and apparatus for crystal growth that uses block materials as source materials, dynamically replacing sublimated target source materials with candidate source materials based on preset conditions, maintaining a controlled temperature gradient and speed to ensure continuous growth of large-size and high-quality crystals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional PVT method uses powder source material for crystal growth, then crystal growth can proceed, but carbon enrichment occurs reducing sublimation rate and causing crystal defects
Solution Approach 1:
The patent changes the physical state parameter of the source material from powder to block form. This parameter change prevents carbon enrichment by providing a different sublimation surface area to volume ratio, thereby maintaining crystal quality while enabling continuous growth of large-size crystals
Solution Approach 2:
The patent implements dynamic replacement of the source material block during the crystal growth process. When the block is consumed, it is replaced with a fresh block, allowing continuous operation without interruption and maintaining high crystal growth rate throughout the process
2Length of moving object
If powder source material is used in traditional PVT, then crystal growth can occur, but the crystal size is limited
Solution Approach 1:
Changing the source material from powder to block form fundamentally alters the consumption characteristics. The block form provides a larger reservoir of material that can sustain longer growth periods, enabling production of large-size crystals without frequent replacement
Solution Approach 2:
The source material is prepared in advance as a large block that can sustain extended crystal growth. This preliminary preparation of the source material in a long-lasting form enables continuous growth operations for producing large-size crystals
3Length of moving object
If continuous crystal growth is pursued, then large-size crystals can be obtained, but source material depletion causes growth interruption
Solution Approach 1:
The system implements dynamic replacement of the source material block during operation. A control system monitors the growth process and replaces the block when consumption reaches a predetermined level, ensuring continuous crystal growth without interruption and enabling production of very large crystals
Solution Approach 2:
The patent ensures continuous crystal growth by implementing automatic or manual replacement of the source material block before complete depletion occurs. This continuity mechanism eliminates growth interruptions and enables uninterrupted production of large-size crystals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the growth of large-size and high-quality crystals by continuously replacing sublimated source materials, preventing carbon enrichment and adhering issues, thereby improving crystal quality and growth efficiency.
Implementation Method 1
Physical vapor transport (PVT) is a common method for crystal growth, during which materials can be sublimated in high-temperature regions
Implementation Method 2
crystals can be grown in low-temperature regions using diffusion and transport of vapor
Data Source
AI summary
The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.