Polycrystalline Material Growth TRIZ Cases
- Transition-Metal Chalcogenide Wafer Growth for 12-Inch Batch CVD
Stacked growth modules and adjustable slot assemblies improve precursor diffusion to produce uniform 12-inch transition-metal chalcogenide wafers in batches.
- Heteroelement-Containing Graphene With High Crystallinity
Selective heteroelement introduction preserves graphene flatness and crystallinity while improving carrier density and catalytic properties.
- Diamond Layer Growth by Scanning Microwave Plasma CVD
Scanning the plasma spot or substrate overcomes fixed irradiation limits, enabling uniform large-diameter single-crystal diamond growth.
- Continuous Graphene Synthesis Using Cross-Direction Joule Heating
Cross-direction feeding and joule heating enable continuous graphene production while reducing quartz degradation and metal contamination.
- Magnetic Pole Positioning for Stable Silicon Ingot Interface Control
Shifting the maximum gauss plane during silicon ingot growth keeps the crystal-melt interface stable and improves Perfect Silicon yield.
- SiC Epitaxial Growth Layout for Full Seed Area Coverage
A face-up substrate with source material above removes spacer-limited non-growth zones in SiC epitaxy and supports full seed area growth.
- Methods for crystal growth by replacing a sublimated target source material with a candidate source material
Dynamic replacement of sublimated source blocks in PVT growth avoids carbon enrichment and supports larger, higher-quality crystals.
- Nitrogen-Doped Silicon Melt Preparation for Uniform BMD Control
Uniform polysilicon granules with silicon nitride coatings enable even nitrogen dissolution, stabilizing BMD density and intrinsic gettering.
- Rocking Seed Crystal Surface Treatment for Uniform Corrosion
Rocking seed support enables uniform corrosion, complete rinsing, and hot nitrogen drying to reduce contamination and crystal defects.
- Oxygen-Doped AlN Hardcoat Layers for Cutting Tool Wear Resistance
Controlled oxygen doping and textured thermal CVD raise AlN hardcoat hardness and wear resistance for cutting tools.
- Induction-Heated Ingot Growth Furnace With Coil Heat Insulation
A heat insulation member between the susceptor and coil blocks heat transfer, cutting power use while protecting the coil in ingot growth.
- High-Entropy Alloy Synthesis via Low-Temperature Isothermal Solidification
Low-temperature isothermal solidification with liquid gallium traps high-entropy alloy states while controlling composition, morphology, and crystallinity.
- Single-Crystal Silicon Ingot Neck Growth for Dislocation Control
Low-speed neck growth and a concave melt interface help block dislocation transfer while keeping later silicon ingot growth stages faster.
- Carbon Nanostructure Production with Two-Chamber Catalyst Control
Separating catalyst nanoparticle formation from nanostructure growth improves property control, cuts agglomeration, and raises output.
- Multi-Layer Quartz Crucible for Heat Deformation and Devitrification
A layered quartz crucible balances deformation resistance and devitrification control by pairing an easily devitrifiable layer with a low devitrification layer.
- 3C-SiC Epitaxial Substrate Separation via Vacancy Layer Formation
A vacancy layer formed by solid-state Si diffusion enables clean release of large-diameter 3C-SiC free-standing substrates without melting or etching.
- Czochralski Silicon Wafer Growth With Low Pinhole and Impurity Levels
Low-pressure purge gas and controlled melt flow cut pinholes while keeping carbon and iron impurities low in Czochralski silicon wafers.
- Vertical FinFET Neutralized Fin Tips for Lower Junction Leakage
Localized ion implantation or hydrogen plasma neutralizes FinFET fin tips to reduce junction leakage and conductivity variation.
- Ferroelectric Domain-Wall Structure for Faster Polarization Switching
A Pbcn structural layer at the domain wall lowers the inversion energy barrier, enabling faster ferroelectric switching in semiconductor devices.
- GaN-on-Si Nitride Structure With Iron Doping for Low Insertion Loss
Iron-doped nitride layers and a polarity inversion layer suppress parasitic channels in GaN-on-Si, lowering insertion loss while preserving epitaxial quality.
- Polysilicon Rod Grain Boundary Control for FZ Crystal Yield
EBSD-based grain boundary measurement guides polysilicon rod production to cut FZ single crystallization defects and stabilize yield.