Transition-Metal Chalcogenide Wafer Growth for 12-Inch Batch CVD
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Solution Overview
Problem
Current methods for preparing two-dimensional transition-metal chalcogenides are limited by poor precursor diffusion, resulting in small wafer sizes incompatible with industrial processes and low preparation efficiency, with traditional technologies only allowing wafers smaller than 4 inches and producing one piece per batch.
Innovation Solution
A device and method utilizing a slot assembly with adjustable slots and a support assembly for 'face-to-face' local element supply of precursors with high reactivity, enabling the preparation of large-size wafers up to 12 inches and allowing batch production through stacked growth modules.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If traditional preparation technology is used, then the process is simple, but the wafer size is limited to smaller than 4 inches due to poor precursor diffusion
Solution Approach 1:
The preparation process is divided into multiple heating zones (first heating zone, second heating zone, third heating zone) with different temperature gradients, allowing precise control of precursor diffusion at different stages. The slot assembly is segmented into multiple slots (first slot, second slot, third slot) that can be independently controlled, enabling different material sources to be processed simultaneously with optimized local conditions for each zone.
Solution Approach 2:
Different regions of the reaction chamber are provided with different temperature conditions and gas flow rates. The first heating zone has a first temperature gradient, the second heating zone has a second temperature gradient, and the third heating zone has a third temperature gradient. This local quality control allows the precursor to diffuse uniformly across the entire wafer surface, solving the poor diffusion problem while maintaining process simplicity.
2Productivity
If traditional preparation technology is used, then the equipment is simple, but the preparation efficiency is low with only one piece per batch
Solution Approach 1:
Multiple heating zones and multiple slot assemblies are merged into a single reaction chamber, allowing simultaneous preparation of multiple wafers in one batch. The first slot assembly, second slot assembly, and third slot assembly can operate concurrently, each contributing to the formation of different material layers or different wafers, thereby dramatically increasing productivity while maintaining a relatively integrated equipment structure.
Solution Approach 2:
The preparation system transitions from a single-plane, single-batch process to a multi-dimensional, multi-layer simultaneous process. The vertical stacking of multiple heating zones and slot assemblies enables three-dimensional utilization of the reaction chamber space, allowing multiple wafers to be prepared at different heights and positions simultaneously, thus achieving batch production capability.
3Length of stationary object
If multiple heating zones and auxiliary diffusion equipment are added, then the wafer size can be increased, but the preparation efficiency is greatly limited
Solution Approach 1:
Each heating zone and slot assembly is designed to perform multiple functions. The heating zones not only control temperature gradients for diffusion but also serve as reaction zones for material deposition. The slot assemblies function both as material delivery channels and as structural supports for the wafer preparation process. This multi-functionality reduces the need for separate auxiliary equipment, thereby maintaining high preparation efficiency while enabling large wafer sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high-quality, uniform, and defect-free transition-metal chalcogenide wafers suitable for industrial semiconductor processes, enabling batch production of multiple wafers with adjustable properties.
Implementation Method 1
the chemical vapor deposition technology is considered to be the most effective method for preparing high-quality wafer-scale two-dimensional transition-metal chalcogenides
Data Source
AI summary
The present disclosure relates to a transition-metal chalcogenide wafer, preparation method therefor, and device thereof. The preparation method includes: S1, assembling the growth modules; and S2, vertically stacking the assembled growth modules to obtain the combined growth module; placing the combined growth module in a container; heating up to a preset temperature under an inert gas protective atmosphere; and performing a chemical vapor deposition to obtain the wafer.