Quantum Processor Capacitance Tuning With Flux-Biased Voltage Gain

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Solution Overview

Problem

Existing quantum computing technologies face challenges in accurately tuning the physical characteristics of quantum devices, such as qubits and couplers, which are crucial for optimal performance and error correction in quantum computations.

Innovation Solution

The implementation of a quantum processor design that includes a voltage gain tuner inductively coupled to the inductance of a current path, allowing for the control of capacitance through a flux bias line. This design enables the tuning of qubit and coupler characteristics to align with specific computational parameters.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If quantum devices are fabricated with fixed physical characteristics, then manufacturing is simpler, but performance accuracy deteriorates due to fabrication variations

Engineering Contradiction:
Improvecapacitance tuning precisionVSAvoidquantum processor structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent implements dynamic capacitance tuning by introducing voltage gain tuners that can adjust the effective capacitance of qubits and couplers during operation. This transforms fixed physical characteristics into dynamically adjustable parameters, allowing the system to compensate for fabrication variations and optimize performance for different computational tasks.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the electrical parameter (capacitance) of quantum devices by using voltage gain tuners to modify the effective capacitance values. This allows continuous adjustment of capacitance parameters to achieve target values, resolving the contradiction between manufacturing simplicity and performance precision.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the quantum processor structure is expanded to include tuning mechanisms, then performance accuracy improves, but device complexity increases

Engineering Contradiction:
Improvecomputational accuracyVSAvoidquantum processor structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The voltage gain tuners serve multiple functions: they tune capacitance values, compensate for fabrication variations, and enable dynamic reconfiguration of the quantum processor. This multi-functionality reduces the need for separate tuning mechanisms for different purposes, minimizing the increase in device complexity while achieving high computational accuracy.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

By enabling continuous adjustment of capacitance parameters through voltage gain control, the system achieves high measurement and computational precision. The ability to dynamically change parameters allows the quantum processor to maintain optimal performance across varying computational requirements.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If capacitance values are fixed during fabrication, then manufacturing is easier, but adaptability to different computational parameters deteriorates

Engineering Contradiction:
Improvecomputational parameter tuningVSAvoidquantum device fabrication
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent transforms fixed capacitance values into dynamically adjustable parameters through voltage gain tuners. This allows the quantum processor to adapt to different computational parameters and algorithms without requiring different fabrication processes, maintaining ease of manufacture while achieving high adaptability.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent incorporates tuning mechanisms during the fabrication process, establishing the capability for future adjustment before the device is put into service. This preliminary preparation enables easy adaptability to different computational requirements without complicating the core fabrication process.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution allows for precise tuning of qubit capacitance, improving the accuracy and efficiency of quantum computations by compensating for fabrication variations and dynamic changes during quantum annealing processes.

Implementation Method 1

a voltage gain tuner, the voltage gain tuner being inductively coupled to the inductance of the first current path

Methodology Applied
Scientific EffectInductive coupling: Electromagnetic Induction

Implementation Method 2

a Josephson structure interrupting the first loop, the Josephson structure comprising at least one Josephson junction

Methodology Applied
Scientific EffectJosephson effect: Josephson Effect

Implementation Method 3

A superconducting material is a material that has no electrical resistance below critical levels of current, magnetic field and temperature

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS12301225B2Systems and methods for tuning capacitance in quantum devices
Publication Date: 2025.05.13 1372934 B C LTD
  • US12301225B2 patent drawing
  • US12301225B2 patent drawing
  • US12301225B2 patent drawing

AI summary

Systems and methods for capacitance tuning of devices in quantum processors are described. One implementation is a quantum processor with a first current path having a first loop, a Josephson structure with at least one Josephson junction interrupting the first loop, a second current path connected to the first current path, and a flux bias. The second current path has a first node spaced from a second node, a capacitor separating the first node and the second node, and a voltage gain tuner, the voltage gain tuner being inductively coupled to the inductance of the first current path. The flux bias is coupled to the voltage gain tuner and controls the voltage gain tuner to vary a voltage ratio between the first node and the second node, thereby influencing the capacitance of the first current path.