Quantum Dot Qubit Structure Using Fringe Electric Field Compensation
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Solution Overview
Problem
Semiconductor-type quantum bit devices experience significant operational variations due to slight dimensional deviations during manufacturing, which hinder large-scale integration and increase error rates in quantum computing operations.
Innovation Solution
A semiconductor-type quantum bit device is designed with a support substrate, a fringe electric field forming layer, a buried oxide layer, and a quantum dot semiconductor layer, along with a back gate electrode, to suppress operational variations by utilizing a fringe electric field that compensates for dimensional deviations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If high integration is achieved by burying small magnets in semiconductor layers, then the formation area per quantum bit is reduced, but characteristic variations in quantum bit operations increase due to dimensional variations
Solution Approach 1:
The patent introduces a fringe electric field forming layer with specific conductivity type (opposite to the support substrate) to generate a fringe electric field that compensates for dimensional variations. This changes the electrical parameter landscape to offset the harmful effects of dimensional changes, thereby maintaining reliable quantum bit operations despite high integration.
Solution Approach 2:
The fringe electric field acting as an intermediary mechanism between the dimensional variations and the quantum bit operations. This fringe electric field mediates the relationship by compensating for the effects of dimensional variations, allowing high integration without sacrificing operational reliability.
2Manufacturing precision
If dimensional variations are suppressed through advanced manufacturing equipment, then manufacturing precision improves, but it remains difficult to avoid variations on the order of several nanometers
Solution Approach 1:
The patent converts the harmful effect of dimensional variations into a beneficial compensation mechanism. By designing the fringe electric field forming layer with opposite conductivity type, the fringe electric field generated actually compensates for the dimensional variations, turning what would be a harmful effect into a beneficial correction that maintains operational consistency.
Solution Approach 2:
The patent changes the electrical parameters by introducing a fringe electric field that depends on the conductivity type distribution. This parameter change allows the system to compensate for dimensional variations, making the quantum bit operations consistent despite manufacturing precision limitations.
3Reliability
If fringe electric field forming layer is added to suppress variations, then quantum bit operation consistency improves, but device complexity increases
Solution Approach 1:
The patent applies local quality by placing the fringe electric field forming layer specifically at the interface between the support substrate and the quantum dot semiconductor layer. This localized placement with opposite conductivity type creates the necessary fringe electric field only where needed, minimizing overall device complexity while maintaining operation consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device effectively reduces characteristic variations in quantum bit operations, enabling reliable large-scale integration and minimizing errors in quantum computing operations.
Implementation Method 1
a fringe electric field forming layer formed on the support substrate, the fringe electric field forming layer being formed of any one of a second conductivity type semiconductor layer and a metal layer
Implementation Method 2
the metal layer forming a Schottky barrier with the support substrate
Data Source
AI summary
The present invention has an object to provide a semiconductor-type quantum bit device in which, at the time of integration of a plurality of devices, characteristic variations of a quantum bit operation are suppressed. Provided is a semiconductor-type quantum bit device (10), comprising at least: a support substrate (1) formed of a first conductivity type semiconductor layer; a fringe electric field forming layer (2) formed on the support substrate (1), the fringe electric field forming layer (2) being formed of any one of a second conductivity type semiconductor layer and a metal layer, the second conductivity type semiconductor layer having a conductivity type different from a conductivity type of the first conductivity type semiconductor layer, the metal layer forming a Schottky barrier with the support substrate; a buried oxide layer (3) formed on the fringe electric field forming layer (2); and a quantum dot semiconductor layer (4) which is formed on the buried oxide layer (3) and in which quantum dots are formed.