Quantum Dot Light Conversion Patterning Without Photoinitiator Quenching
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Solution Overview
Problem
Current methods for preparing light conversion devices using quantum dots face issues such as low light conversion efficiency due to photoinitiators quenching luminescence and incompatibility with solvents, and poor patterning resulting in non-uniform dispersion and residual quantum dots in non-target areas.
Innovation Solution
A method involving multiple photolithography processes with quantum dot adhesive and photoresist layers to form patterned quantum dot structures on a substrate with pixel isolation structures, where the quantum dot adhesive fills sub-pixel regions and is cured without photoinitiators, enhancing light conversion efficiency and reducing fluorescence quenching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If quantum dot photoresist resin is prepared and coated on substrate, then light conversion device can be obtained, but photoinitiators in resin quench luminescence of quantum dots and reduce light conversion efficiency
Solution Approach 1:
The patent extracts and removes photoinitiators from the quantum dot adhesive layer formulation. Instead of using conventional photoresist resin containing photoinitiators that quench luminescence, the invention uses a photopolymerizable adhesive composition free of photoinitiators, thereby eliminating the harmful quenching effect and improving light conversion efficiency
Solution Approach 2:
The patent introduces a photoresist layer as an intermediary between the UV light source and the quantum dot adhesive layer. This photoresist layer undergoes photopolymerization to form a cured layer that protects the quantum dots from direct UV exposure, allowing indirect patterning without direct photoinitiator contact with quantum dots
2Ease of manufacture
If conventional photoresist resin with PGMEA solvent is used, then coating process is feasible, but quantum dots show low solubility and nonuniform dispersion affecting photolithography
Solution Approach 1:
The patent changes the chemical parameters of the adhesive composition by selecting solvents and additives compatible with quantum dots. The photopolymerizable adhesive composition uses specific solvent systems that ensure high solubility and uniform dispersion of quantum dots, enabling precise patterning through photolithography
3Ease of manufacture
If surface modification of non-quantum dot layer is performed, then quantum dot resin can automatically fill sub-pixel regions, but quantum dot resin remains in non-target areas resulting in poor display
Solution Approach 1:
The patent uses a photoresist layer as an intermediary that enables precise control of quantum dot adhesive layer formation. Through photolithographic exposure and development, the photoresist layer creates a mask that directs quantum dot adhesive layer deposition only to desired sub-pixel regions, preventing residual quantum dots in non-target areas
Solution Approach 2:
The patent performs preliminary photopolymerization of the photoresist layer before quantum dot adhesive layer formation. This preliminary action creates a protective cured layer that defines the pattern boundaries, ensuring subsequent quantum dot adhesive layer material deposits only in intended regions and prevents unwanted residue
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves light conversion efficiency by maintaining high quantum dot concentration and reducing quenching, while also lowering costs and ensuring precise patterning without residual quantum dots in non-target areas.
Implementation Method 1
the photoresist layer is exposed and developed, and at least one sub-pixel region is exposed; curing the quantum dot adhesive layers which are remaining and the photoresist layers which are remaining which is remaining to obtain the patterned quantum dot structures and cured photoresist layers
Implementation Method 2
curing the quantum dot adhesive layers which are remaining and the photoresist layers which are remaining which is remaining to obtain the patterned quantum dot structures and cured photoresist layers
Implementation Method 3
a plurality of pixel isolation structures are disposed on a first surface of a substrate layer, and a plurality of sub-pixel regions isolated from each other are formed between the pixel isolation structures; the plurality of pixel isolation structures are opaque
Data Source
AI summary
Disclosed are a light conversion device and a preparation method thereof, and a display device having the light conversion device. The preparation method includes the step of performing photolithography process n times on the substrate layer sequentially, wherein a patterned quantum dot structure and a cured photoresist layer are obtained by means of this step.