Quantum Dot Porous LED Structure for Micro-Scale Luminous Efficiency
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Solution Overview
Problem
Miniaturized light emitting diodes (LEDs) face reduced luminous efficiency due to surface defects when scaled to micro or nano units, affecting their performance in display applications.
Innovation Solution
A light emitting device is designed with a semiconductor structure featuring a first and second semiconductor layer, a light emitting layer, and quantum dots within pores, surrounded by internal and external passivation layers to enhance luminous efficiency and wavelength selectivity, allowing for the conversion of short-wavelength light to longer wavelengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If LEDs are miniaturized to micro units or nano units, then the application range and integration density are improved, but the luminous efficiency is reduced due to surface defects
Solution Approach 1:
The patent introduces a porous structure in the first semiconductor layer, creating pores that are filled with quantum dots. This porous configuration increases the surface area for light emission while maintaining a compact footprint, thereby improving integration density without sacrificing luminous efficiency. The quantum dots within the pores convert light effectively, mitigating the surface defect issues that typically plague miniaturized LEDs.
Solution Approach 2:
The patent combines multiple materials with complementary properties: the first semiconductor layer provides the base structure, quantum dots enable efficient light conversion, and passivation layers (including insulating crystals) protect against surface defects. This composite approach allows the device to maintain high luminous efficiency at miniaturized scales by addressing surface defect issues through material composition rather than simply increasing size.
2Adaptability or versatility
If quantum dots are introduced to convert light wavelength, then the color conversion capability is improved, but the device structure becomes more complex
Solution Approach 1:
The patent merges the quantum dot light conversion function with the semiconductor layer structure by integrating quantum dots directly into the porous first semiconductor layer. The passivation layers are also merged with the pore structure, forming a unified architecture where multiple functions (structural support, light conversion, defect protection) are combined in a single integrated design rather than separate components.
Solution Approach 2:
The patent applies local quality by placing quantum dots specifically within the pores of the first semiconductor layer rather than uniformly throughout the structure. The passivation layers are also applied locally to surround the pores and quantum dots. This localized approach enables color conversion functionality where needed while maintaining structural simplicity in other regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves luminous efficiency by reducing surface defects and optimizing light emission, enabling the production of light emitting devices with enhanced color conversion rates and improved performance in display applications.
Implementation Method 1
a light emitting layer provided on the first semiconductor layer
Implementation Method 2
the plurality of quantum dots are configured to absorb the first light of the first wavelength and emit second light of a second wavelength that is longer than the first wavelength
Implementation Method 3
an internal passivation layer at least partially surrounding the sidewall of the semiconductor light emitting structure and provided on inner surfaces of the plurality of pores
Data Source
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AI summary
A light emitting device includes a semiconductor light emitting structure including, a first semiconductor layer including a plurality of pores, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer, a plurality of quantum dots provided in the plurality of pores, and an external passivation layer at least partially surrounding a sidewall of the semiconductor light emitting structure, where the plurality of quantum dots are provided between the plurality of pores and the external passivation layer.