Quantum Dot Electroluminescence Layer Structure for Uniform Emission

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Solution Overview

Problem

Quantum dot electroluminescence devices face challenges in achieving high performance due to non-uniform light emitting surfaces and increased leakage current, which affect luminous efficiency and light emitting life-span.

Innovation Solution

A quantum dot electroluminescence device with a hole transport layer comprising a polymer material and a low molecular material, featuring a quantum dot with a core-shell structure, and a residual film ratio of 95% or more, to construct a design film thickness and suppress surface non-uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a hole transport layer is dissolved in a solvent to facilitate forming a light emitting layer with transport material dispersed between quantum dots, then hole injection efficiency is improved and carrier balance is improved, but non-uniformity and roughness of the light emitting surface occur and leakage current increases

Engineering Contradiction:
Improvehole injection efficiencyVSAvoiduniformity of light emitting surface
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the physical state parameter of the hole transport material from dissolved state to dispersed state. Instead of dissolving the hole transport material in a solvent to form a uniform solution, the patent disperses it as particles or aggregates within the quantum dot layer. This parameter change allows the material to maintain functional effectiveness while avoiding the surface non-uniformity and leakage current issues associated with dissolved states.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a hole transport layer is dissolved in a solvent to facilitate forming a light emitting layer with transport material dispersed between quantum dots, then carrier balance is improved, but leakage current increases

Engineering Contradiction:
Improvecarrier balanceVSAvoidleakage current
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the distribution state parameter of the hole transport material from dissolved to dispersed. By dispersing the hole transport material as distinct particles or aggregates rather than dissolving it uniformly, the patent maintains effective carrier balance while preventing the formation of continuous conductive pathways that would increase leakage current.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a quantum dot electroluminescence device is developed to achieve high performance with long light emitting life-span and high efficiency, then device performance is improved, but non-uniform light emitting surfaces and increased leakage current occur

Engineering Contradiction:
Improvelight emitting life-spanVSAvoiduniformity of light emitting surface
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the state parameter of the hole transport material from dissolved to dispersed within the quantum dot layer. This parameter change enables the device to achieve high performance and long light emitting life-span while maintaining uniform light emitting surfaces, as the dispersed material does not create the surface non-uniformity associated with dissolved states.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances luminous efficiency and light emitting life-span by improving hole transport capability and reducing surface roughness, thereby addressing the issues of non-uniformity and leakage current.

Implementation Method 1

quantum dot electroluminescence device

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS11997917B2Quantum dot electroluminescence device
Publication Date: 2024.05.28 SAMSUNG ELECTRONICS CO LTD
  • US11997917B2 patent drawing
  • US11997917B2 patent drawing
  • US11997917B2 patent drawing

AI summary

A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.