Quartz Support Ring Flash Annealing to Prevent Wafer Jumping

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Solution Overview

Problem

Existing flash lamp annealing processes cause semiconductor wafers to warp and jump due to abrupt thermal expansion, leading to potential cracking and flaws, necessitating complex support mechanisms to prevent damage.

Innovation Solution

A heat treatment apparatus with a susceptor featuring a quartz holding plate and annular protrusion, combined with a pressure-reducing mechanism, prevents substrate jumping by exerting a force from above and maintaining a pressure difference during flash irradiation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If flash lamp annealing is used to heat the semiconductor wafer surface rapidly, then the activation temperature is reached quickly, but the wafer undergoes abrupt thermal expansion and jumps from the susceptor, causing potential cracking and flaws

Engineering Contradiction:
Improveheating speedVSAvoidwafer integrity
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent introduces a cushioning member (elastic member) between the susceptor and the semiconductor wafer to absorb the impact force generated during flash lamp annealing. This cushioning mechanism prevents the wafer from jumping off the susceptor and avoids cracking or flaws, while still allowing rapid heating to occur. The elastic member compresses during the abrupt thermal expansion and rebounds, cushioning the wafer against the susceptor surface.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If a cushioning member is introduced to prevent wafer jumping, then wafer integrity is improved, but the device complexity increases

Engineering Contradiction:
Improvewafer integrityVSAvoidsusceptor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs an elastic member (such as an elastic plate or cushioning film) as a simple flexible component integrated into the susceptor structure. This thin, flexible element provides the necessary cushioning function without adding significant structural complexity. The elastic member can be a simple sheet or layer that compresses and rebounds, preventing wafer jumping while maintaining a relatively simple overall device design.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus effectively prevents substrate jumping and cracking by stabilizing the substrate during flash irradiation, ensuring reliable and efficient heat treatment without complex support structures.

Implementation Method 1

irradiate a surface of a semiconductor wafer with a flash of light, thereby raising the temperature of only the surface of the semiconductor wafer in an extremely short time

Methodology Applied
Scientific EffectLight irradiation heating: Absorption (EM radiation)

Implementation Method 2

the temperature of the front surface of the semiconductor wafer is raised rapidly in an instant, whereas the temperature of a back surface thereof does not rise so high. This causes abrupt thermal expansion of only the front surface of the semiconductor wafer

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 3

a force pressing from above is exerted on an upper surface of the substrate because of a pressure difference between the spaces overlying and underlying the substrate. This prevents the substrate from jumping at the time of the flash irradiation

Methodology Applied
Scientific EffectPressure difference force: Pressure Gradient

Data Source

PatentUS20260082849A1Heat treatment apparatus and heat treatment method for heating substrate by light irradiation
Publication Date: 2026.03.19 SCREEN HOLDINGS CO LTD
  • US20260082849A1 patent drawing
  • US20260082849A1 patent drawing
  • US20260082849A1 patent drawing

AI summary

A support ring which is an annular protrusion of quartz having a diameter smaller than that of a semiconductor wafer is provided upright on an upper surface of a holding plate of a susceptor. A flash of light is applied to a front surface of the semiconductor wafer supported by the support ring to heat the semiconductor wafer. When the semiconductor wafer is placed on the support ring, an enclosed space is formed which is surrounded by the upper surface of the holding plate, a lower surface of the semiconductor wafer, and an inner wall surface of the support ring. At the time of the flash irradiation, a force pressing from above is exerted on the front surface of the semiconductor wafer because of a pressure difference between the space overlying the semiconductor wafer and the enclosed space to prevent the semiconductor wafer from jumping.