Radiation Detector Ultrathin Passivation Layer Light Transmission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing radiation detectors suffer from significant energy loss and low energy utilization due to multiple layers between the scintillation layer and the photosensor, leading to reduced detection sensitivity and increased radiation dosage required for imaging.
Innovation Solution
A radiation detector design featuring a thin film transistor, an insulating layer, a photosensor with a first and second polarity layer, a passivation layer, a scintillation layer, and a reflective layer, where the passivation layer is ultrathin and unitary, eliminating unnecessary metallic layers and bias electrodes, and utilizing the reflective layer to apply a negative voltage for biasing the photosensor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple layers (metallic layers, bias electrodes, thick passivation layers) are used between scintillation layer and photosensor, then structural stability and electrical isolation are improved, but light transmission efficiency deteriorates and energy loss increases
Solution Approach 1:
The patent removes unnecessary metallic layers and bias electrodes from the structure between scintillation layer and photosensor. By extracting these energy-loss-inducing components, the design achieves direct contact between the passivation layer and photosensor, significantly improving light transmission efficiency while maintaining structural stability through the remaining optimized layers.
Solution Approach 2:
The patent employs an ultrathin passivation layer instead of thick insulating layers. This thin film approach provides sufficient electrical isolation and structural stability while minimizing light absorption and scattering, thereby maximizing light transmission efficiency to the photosensor.
2Reliability
If multiple layers and components are included between scintillation layer and photosensor, then device functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent eliminates redundant metallic layers and bias electrodes, reducing the total number of layers that need to be deposited and patterned. This extraction of unnecessary components directly reduces manufacturing complexity while preserving essential device functionality through the optimized remaining structure.
Solution Approach 2:
The patent merges the functions of multiple separate layers into a simplified structure. The passivation layer simultaneously provides electrical isolation, structural support, and optical transparency, eliminating the need for separate metallic shielding layers and bias electrode structures, thereby reducing manufacturing steps.
3Reliability
If traditional multi-layer structure is used, then electrical isolation is improved, but photosensing area is reduced
Solution Approach 1:
The patent uses an ultrathin passivation layer that provides sufficient electrical isolation while occupying minimal space. This thin film structure allows the photosensor to extend closer to the scintillation layer, maximizing the photosensing area without compromising electrical isolation between components.
Solution Approach 2:
The patent reduces the vertical thickness of insulating layers, effectively moving the photosensor closer to the scintillation layer in the vertical dimension. This dimensional optimization increases the active photosensing area while maintaining adequate electrical isolation through the optimized passivation layer thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances light utilization, increases the photosensing area, simplifies fabrication, and reduces manufacturing costs, resulting in improved detection sensitivity and lower radiation dosage for comparable imaging quality.
Implementation Method 1
The scintillation layer converts the radiation (e.g., X-ray photons) into visible light
Implementation Method 2
The PIN photodiode converts the visible light into electrical signals for image display
Implementation Method 3
a reflective layer on a side of the scintillation layer away from the base substrate
Data Source
AI summary
A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.