Radiation Sensing Device Second Gate Bias Recovery
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Solution Overview
Problem
Radiation exposure affects the electrical properties of semiconductor units in digital radiation sensing devices, leading to operation failures and reduced device lifetime due to changes in the properties of stacked layers such as the semiconductor channel layer, gate dielectric layer, and channel passivation layer, resulting in negative shifts in threshold voltage.
Innovation Solution
A radiation sensing device with a second gate electrode that applies a positive bias voltage during a standby mode to recover the electrical performance of semiconductor units, preventing radiation-induced operational issues and extending device lifetime by accumulating electrons in the protection layer and restoring the energy gap of the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor units are used in radiation sensing devices, then radiation detection capability is achieved, but electrical performance deteriorates due to radiation-induced threshold voltage shift
Solution Approach 1:
The patent applies preliminary anti-action by applying a positive bias voltage to the second gate electrode before radiation exposure occurs. This pre-applied positive voltage counteracts the anticipated negative threshold voltage shift caused by radiation, thereby preventing performance degradation rather than correcting it after the fact. The bias voltage is maintained during standby mode to continuously oppose radiation effects.
Solution Approach 2:
The patent changes the electrical parameter (voltage) applied to the second gate electrode from zero or negative to a positive bias voltage. This parameter change modifies the electrical characteristics of the semiconductor unit to compensate for radiation-induced changes. By adjusting the voltage parameter, the system adapts to counteract the harmful effects of radiation on threshold voltage.
2Duration of action of stationary object
If traditional semiconductor structures are used, then device simplicity is maintained, but device lifetime is reduced due to cumulative radiation damage
Solution Approach 1:
The patent segments the gate structure into two separate gate electrodes (first gate electrode and second gate electrode) with the active layer positioned between them. This segmentation allows the second gate electrode to specifically handle radiation compensation functions while the first gate electrode maintains normal switching operations. By dividing the gate function, the system extends device lifetime without requiring complete structural redesign.
3Reliability
If positive bias voltage is applied to second gate electrode during standby mode, then electrical performance is recovered, but energy consumption increases
Solution Approach 1:
The patent implements periodic action by applying the positive bias voltage to the second gate electrode specifically during standby mode intervals between radiation exposures. The bias voltage is not continuously applied but rather in periodic cycles corresponding to standby periods. This approach allows performance recovery while minimizing energy consumption by limiting bias application to necessary time windows rather than operating continuously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The positive bias voltage on the second gate electrode during the standby mode effectively recovers the threshold voltage shift, ensuring normal electrical performance and extending the device's operational lifespan without modifying the manufacturing processes of the stacked layers.
Implementation Method 1
by accumulating electrons in the protection layer and restoring the energy gap of the active layer
Data Source
AI summary
A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.