Radical-Assisted Sputtering for Low-Temperature GaN Film Deposition
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Solution Overview
Problem
Existing sputtering methods for depositing gallium nitride films on micro LED devices require high temperatures, making it difficult to form micro LED devices on glass substrates, and there is a need for a more reliable and efficient method to deposit high-quality gallium nitride films at lower temperatures.
Innovation Solution
A sputtering apparatus with adjustable radical irradiation apparatuses that allow for individual control of radical generation and distribution, enabling precise film deposition and quality control during the sputtering process, particularly for gallium nitride films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gallium nitride film is deposited by MOCVD or HVPE, then high-quality film can be obtained, but deposition requires high temperature of 800°C to 1000°C
Solution Approach 1:
The patent changes the deposition parameters by using sputtering method with radical irradiation instead of MOCVD or HVPE, enabling gallium nitride film deposition at lower temperatures (below 800°C) while maintaining film quality through controlled radical exposure during the sputtering process
Solution Approach 2:
The patent introduces radicals as an intermediary substance during sputtering deposition. The radicals facilitate the formation of high-quality gallium nitride films at lower temperatures by enhancing the chemical reaction and film formation process without requiring the high temperatures of conventional methods
2Temperature
If conventional sputtering method is used, then deposition at lower temperature is enabled, but film quality and reliability are insufficient
Solution Approach 1:
The patent introduces radicals as an intermediary to enhance the conventional sputtering process. The radical irradiation apparatus generates radicals that interact with the depositing gallium nitride film, improving film quality, stoichiometry, and reliability while maintaining the low-temperature advantage of sputtering
Solution Approach 2:
The patent supplements the physical sputtering process with chemical radical irradiation. This combination replaces the reliance on high temperature (mechanical/thermal process) with a chemical enhancement mechanism that improves film quality at lower temperatures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the deposition of high-quality gallium nitride films at lower temperatures, facilitating the formation of micro LED devices on glass substrates with improved reliability and brightness.
Implementation Method 1
a sputtering apparatus includes: a substrate hold portion (300) holding a substrate (310); a target (210) facing the substrate hold portion (300) and configured to move to a first direction in a relative positional relationship with the substrate hold portion (300); and a plurality of radical irradiation apparatuses (410 to 440), irradiation positions of radicals from the plurality of radical irradiation apparatuses (410 to 440) on a deposition surface of the substrate (310) being different
Implementation Method 2
the plurality of radical irradiation apparatuses (410 to 440) is configured to individually adjust an amount of radical generation
Data Source
AI summary
A sputtering apparatus includes: a substrate hold portion holding a substrate; a target facing the substrate hold portion and configured to move to a first direction in a relative positional relationship with the substrate hold portion; and a plurality of radical irradiation apparatuses, irradiation positions of radicals from the plurality of radical irradiation apparatuses on a deposition surface of the substrate being different, wherein the plurality of radical irradiation apparatuses is configured to individually adjust an amount of radical generation.