RC Extraction Tool for Through-Semiconductor-Via Distance Measurement

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Solution Overview

Problem

The miniaturization of semiconductor devices leads to increased coupling noise between electrical components, causing signal delays and integrity issues due to the lack of accurate parasitic parameter extraction, especially at high frequencies, as existing tools struggle to accurately determine distances between components for precise simulation evaluations.

Innovation Solution

A design method and system that utilizes an RC extraction tool to determine the distance between electrical components and a simulation tool to model parasitic parameters, combining these to accurately represent coupling noise and semiconductor properties, thereby enhancing post-layout simulations and manufacturing processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the distance between electrical components is not accurately determined, then parasitic parameter extraction is inaccurate, but coupling noise increases at high frequencies

Engineering Contradiction:
Improvedistance measurement accuracyVSAvoidcoupling noise
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by performing distance determination between electrical components before parasitic parameter extraction. The system first calculates the physical distance between components using layout data, then uses this pre-determined distance as input for accurate parasitic parameter extraction. This sequential approach ensures that accurate distance measurement is completed in advance, enabling subsequent accurate parasitic parameter calculation and effective coupling noise mitigation at high frequencies.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If existing extraction tools are used, then the design process is simple, but signal integrity issues occur due to inaccurate parasitic parameter extraction

Engineering Contradiction:
Improvedesign process simplicityVSAvoidsignal integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces an intermediary approach by integrating multiple tools and methods into a unified extraction system. Rather than relying on a single existing tool, the system combines layout data analysis, distance determination algorithms, and parasitic parameter extraction in a coordinated manner. This intermediary system acts as a bridge between simple design processes and accurate signal integrity verification, maintaining ease of use while significantly improving extraction accuracy and reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Volume of moving object

If miniaturization is pursued, then device size decreases and power consumption reduces, but coupling noise between components increases

Engineering Contradiction:
Improvedevice sizeVSAvoidcoupling noise
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting parasitic parameter extraction based on the actual distance between miniaturized components. As device size decreases and component spacing changes, the system recalculates distance parameters and相应ly adjusts parasitic parameter values. This adaptive approach ensures accurate electrical characteristic modeling despite reduced physical dimensions, enabling effective coupling noise management in miniaturized devices while maintaining low power consumption and high functionality.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8904337B2Semiconductor device design method, system and computer-readable medium
Publication Date: 2014.12.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US8904337B2 patent drawing
  • US8904337B2 patent drawing
  • US8904337B2 patent drawing

AI summary

A semiconductor device design system comprising at least one processor is configured to define a resistance-capacitance (RC) extraction tool for determining a distance between first and second through-semiconductor-vias extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second through-semiconductor-vias in the semiconductor substrate. The semiconductor device design system comprising the at least one processor is also configured to extract parasitic parameters of a coupling in the semiconductor substrate based on the distance determined by the RC extraction tool and a model of the coupling included in a simulation tool.