RDL Polymer Stack for High-Temperature Delamination Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Advanced packaging technologies in semiconductor devices face issues with polymer delamination after high temperature processes due to the transition of polymers from a glassy to a rubbery state, leading to separation from metal traces.
Innovation Solution
Implementing polymer layers with varying glass transition temperatures, where layers above the bottom layer have high glass transition temperatures (>260°C) to maintain a glassy state during high temperature processes, preventing deformation and delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If polymer layers are used to connect semiconductor modules, then connectivity between modules is achieved, but polymer delamination occurs after high temperature processes
Solution Approach 1:
The patent changes the glass transition temperature parameter of the polymer material from conventional values to specifically >260°C, which prevents the polymer from transitioning to a rubbery state during high temperature processes, thereby eliminating delamination while maintaining connectivity
Solution Approach 2:
The patent uses composite polymer materials with specific composition (epoxy resin, polyimide, and other additives in defined proportions) to achieve both high glass transition temperature and good adhesion to metal traces, resolving the contradiction between connectivity and stability
2Ease of manufacture
If conventional polymer materials are used, then ease of manufacture is maintained, but polymer deformation occurs during high temperature processes
Solution Approach 1:
By changing the glass transition temperature parameter to >260°C, the polymer maintains its glassy state and shape stability during high temperature processes while still being manufacturable using standard semiconductor fabrication processes
Solution Approach 2:
The patent applies different polymer materials with different glass transition temperatures to different layers: the bottom layer uses polymer with Tg > 260°C for shape stability, while upper layers can use polymer with lower Tg for ease of processing, resolving the contradiction between manufacturing ease and shape stability
3Reliability
If high glass transition temperature polymer is used for upper layers, then polymer delamination is prevented, but manufacturing complexity increases
Solution Approach 1:
The patent applies high glass transition temperature polymer (>260°C) specifically to the bottom layer where it contacts the substrate and provides critical adhesion, while upper layers can use conventional polymer materials, thus preventing delamination at the critical interface without unnecessarily complicating the entire structure
Solution Approach 2:
The patent segments the polymer layers into different functional zones: the bottom layer uses high Tg polymer for adhesion and stability, while upper layers use lower Tg polymer for ease of processing, dividing the material selection problem into manageable segments with different requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer layers remain stable and maintain contact with vias and traces, preventing delamination and ensuring structural integrity during high temperature processes.
Implementation Method 1
Incorporating polymer layers with high glass transition temperatures (Tg > 260°C) for the upper layers and lower glass transition temperature (Tg < 220°C) for the bottom layer, composed of specific percentages of polyimide and epoxy materials to maintain a glassy state and prevent deformation during high temperature processes
Data Source
AI summary
According to one embodiment, a semiconductor device is provided. The semiconductor device includes a first semiconductor module, a redistribution layer (RDL) module and a second semiconductor module. The RDL module is disposed on the first semiconductor module. The RDL module includes a plurality of polymer layers and a plurality of vias. The polymer layers are stacked on the first semiconductor module. The vias are disposed within the polymer layers. The second semiconductor module is disposed on the RDL module. A height difference of a top surface of at least one of the polymer layers ranges from 0 um to 1 um; or an angle between a sidewall and a bottom surface of at least one of the vias ranges from 90° to 95°; or a glass transition temperature (Tg) of at least one of the polymer layers is larger than 260° C.