RDL Trace Layout Outside Interconnector KOZ to Prevent Cracking
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Solution Overview
Problem
In electronic device packages, the organic dielectric material used as an underfill layer or dielectric layer deteriorates at high temperatures above its glass transition temperature, leading to stress that can damage the redistribution layer (RDL) and cause the interconnectors to incline, resulting in potential damage to the RDL.
Innovation Solution
The design includes an RDL with a conductive trace positioned outside the projection region of the interconnector's second sidewall, which is inclined, and the RDL is structured to keep the conductive trace away from the keep out zone (KOZ) to prevent crack issues, using a thicker topmost dielectric layer to further reduce stress on the RDL.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If organic dielectric material is used as underfill layer or dielectric layer, then protection over RDL and around interconnector is provided, but the protection deteriorates at high temperature higher than glass transition temperature causing stress damage to RDL
Solution Approach 1:
The patent positions the conductive trace locally outside the projection region of the interconnector's second sidewall, creating a localized safe zone where the trace is not exposed to stress concentration areas. This local quality approach ensures that the critical conductive trace remains in a protected position even when the organic dielectric material deteriorates at high temperatures.
Solution Approach 2:
The patent divides the space around the interconnector into different zones by defining the projection region of the second sidewall. The conductive trace is specifically placed in a zone outside this projection region, effectively segmenting the area into stress-prone zones and safe zones, thereby protecting the RDL from stress damage.
2Ease of manufacture
If interconnector is inclined along a direction, then connection between RDL and electronic component is achieved, but stress concentration occurs causing RDL cracking
Solution Approach 1:
The patent applies local quality by specifically positioning the conductive trace outside the projection region of the inclined interconnector's second sidewall. This localized positioning strategy ensures that the trace avoids the stress concentration zones created by the inclined interconnector geometry, maintaining RDL structural integrity while allowing the interconnector to be manufactured with its inclined shape for ease of connection.
Data Source
AI summary
An electronic device package is provided. The electronic device package includes a redistribution layer (RDL), a first electronic component and an interconnector. The RDL includes a topmost circuit layer, and the topmost circuit layer includes a conductive trace. The first electronic component is disposed over the RDL. The interconnector is disposed between the RDL and the first electronic component. A direction is defined by extending from a center of the first electronic component toward an edge of the first electronic component, and the direction penetrates a first sidewall and a second sidewall of the interconnector, the second sidewall is farther from the center of the first electronic component than the first sidewall is, and the conductive trace is outside a projection region of the second sidewall.