Recessed Capacitor Structure With Charge-Draining Sidewall Conductor

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Solution Overview

Problem

Capacitor devices in semiconductor structures face issues with parasitic capacitance and charge accumulation in the substrate, which decrease effective capacitance and induce unwanted electric fields.

Innovation Solution

The capacitor device is designed with a conductive structure adjacent to the sidewall of recessed portions in the substrate, collecting and draining charge to reduce parasitic capacitance and increase effective capacitance by providing an electrical connection to a voltage source or drain.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a capacitor device is formed within a recessed portion of a substrate, then the capacitance is increased, but parasitic capacitance is generated outside the recessed portion which decreases effective capacitance

Engineering Contradiction:
ImprovecapacitanceVSAvoidparasitic capacitance
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the harmful parasitic capacitance effect by introducing a conductive structure that actively collects and drains charge from the substrate. This conductive structure is positioned to capture charge that would otherwise accumulate and create parasitic capacitance, effectively removing the harmful effect from the system.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The conductive structure acts as an intermediary element between the capacitor device and the substrate. It mediates the charge interaction by providing a controlled path for charge drainage, preventing direct charge accumulation in the substrate that would generate parasitic capacitance.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If charge accumulates within the substrate, then the capacitor device can be formed, but electric fields are induced in the substrate which reduce effective capacitance

Engineering Contradiction:
ImprovechargeVSAvoidinduced electric field
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The conductive structure extracts excess charge from the substrate by providing a drainage path to a voltage source or ground. This prevents charge accumulation that would otherwise create harmful induced electric fields extending into the substrate.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The conductive structure applies preliminary anti-action by preemptively collecting and draining charge before it can accumulate to levels that would generate harmful electric fields. This proactive charge management prevents the formation of parasitic electric fields.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces charge accumulation in the substrate, leading to decreased parasitic capacitance and increased effective capacitance, enhancing the performance of the semiconductor structure.

Implementation Method 1

a conductive structure coupled to the conductive portion of the substrate, wherein the conductive structure provides an electrical connection from the conductive portion of the substrate to a voltage source or a voltage drain

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

A capacitor device may be used to generate an electric field across a dielectric structure disposed between electrodes

Methodology Applied
Scientific EffectElectric field generation: Electric Field

Implementation Method 3

The capacitor device may store electrical energy between the electrodes of the capacitor device based on generation of the electric field

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS12616022B2Capacitor device and manufacturing method thereof
Publication Date: 2026.04.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12616022B2 patent drawing
  • US12616022B2 patent drawing
  • US12616022B2 patent drawing

AI summary

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a capacitor device within a recessed portion of a substrate. The recessed portion has sidewalls and a bottom surface below a top surface of the substrate. The semiconductor structure includes a dielectric material disposed below the capacitor device and within the recessed portion. The semiconductor structure includes a first conductive structure adjacent one or more of the sidewalls of the recessed portion. The first conductive structure may include a conductive portion of the substrate or a conductive material disposed within the recessed portion. The semiconductor structure includes a second conductive structure coupled to the first conductive structure, where the second conductive structure provides an electrical connection from the first conductive structure to a voltage source or a voltage drain.