Recessed-Electrode 3D Capacitor for High-Voltage Breakdown Control
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Solution Overview
Problem
High voltage applications pose challenges for 3D capacitive structures due to local increases in electrostatic fields at geometrical singularities, limiting energy storage density and requiring thick dielectrics for high breakdown voltage, which restricts the number of trenches and capacitance.
Innovation Solution
A capacitor design with a bottom electrode and a top electrode where the top electrode is positioned below the peaks of the bottom electrode's protruding walls, surrounded by a dielectric region, reducing electrostatic field magnitude near singularities and allowing thicker dielectrics near these areas, enabling thinner walls and increased trench density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the top electrode is positioned below the peaks of the bottom electrode's protruding walls, then the electrostatic field magnitude near geometrical singularities is reduced and breakdown voltage is enhanced, but the specific area contributing to capacitance is limited
Solution Approach 1:
The invention transitions from a planar electrode arrangement to a three-dimensional structure where the top electrode is positioned below the peaks of protruding walls. This dimensional change allows the electrostatic field to extend vertically between electrodes while avoiding concentration at sharp corners, thereby reducing field magnitude near geometrical singularities and enhancing breakdown voltage without sacrificing capacitive area.
2Reliability
If thick dielectrics are used to meet high breakdown voltage requirements, then reliability for high voltage applications is improved, but the number of trenches and energy storage density are reduced
Solution Approach 1:
The invention applies different dielectric thicknesses at different locations within the capacitor structure. Thicker dielectrics are positioned near geometrical singularities where electrostatic field concentration occurs to ensure high breakdown voltage and reliability, while thinner dielectrics are used in regions with lower field stress. This local differentiation allows the capacitor to meet high voltage requirements without unnecessarily reducing the number of trenches and energy storage density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces electrical stress, enhances breakdown voltage, leakage current resistance, and device reliability, allowing for higher energy storage density suitable for high-voltage applications exceeding 900V or 1.2kV.
Implementation Method 1
the magnitude of the electrostatic field is significantly reduced in the vicinity of the peaks of the bottom electrode (i.e. geometrical singularities in the capacitive structure)
Implementation Method 2
said capacitor being formed by the bottom and top electrodes separated by the dielectric region
Data Source
Figure 1
Figure 2~3A
Figure 3B~3C
AI summary
The present invention relates to an electrical device for high-voltage applications and a method for obtaining an electrical device. The proposed electrical device (100) comprises a capacitor including: - a bottom electrode (110) comprising a conductive structure, the conductive structure comprising a base surface and facing protruding walls (111) extending upwards and having a highest surface; - a top electrode (120) comprising at least one conductive region (121) arranged between the facing protruding walls (111) and having a top surface, wherein the top surface of said at least one conductive region (121) lies below or at the level of the highest surface of the protruding walls (111); and - a dielectric region (130) extending conformally over the bottom electrode (110) and surrounding the top electrode (120), said capacitor being formed by the bottom (110) and top (120) electrodes separated by the dielectric region (130).