Reconfigurable Charge Pump Circuit for Flash Memory Voltage Generation
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Solution Overview
Problem
Conventional flash memory devices require multiple charge pump circuits to provide different driving voltages for word and bit lines, leading to increased chip area and power consumption.
Innovation Solution
A charge pump circuit comprising a first booster set and a second booster group, with a detecting circuit to control the number of serially-connected charge pump stages in the second booster group, allowing for flexible voltage generation and reduced circuitry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple charge pump circuits are used to provide different driving voltages for word and bit lines, then the voltage requirements are met, but the chip area and power consumption increase significantly
Solution Approach 1:
The patent implements a universal charge pump circuit that can generate multiple different output voltages (VPP1, VPP2, VDD) by reconfiguring the connection of charge pump stages. The same physical circuit structure serves multiple voltage generation functions through dynamic switching of series/parallel connections, eliminating the need for separate dedicated charge pump circuits for each voltage level.
Solution Approach 2:
The patent employs dynamic reconfiguration of the charge pump circuit topology using control signals. The charge pump stages can be switched between series and parallel connections during operation, allowing the circuit to adaptively change its output voltage based on operational requirements. This dynamic switching capability enables a single circuit to replace multiple static voltage generator circuits.
2Adaptability or versatility
If multiple charge pump circuits are used to provide different driving voltages for word and bit lines, then the voltage requirements are met, but the power consumption increases significantly
Solution Approach 1:
The patent implements a universal charge pump circuit that can generate multiple different output voltages (VPP1, VPP2, VDD) by reconfiguring the connection of charge pump stages. The same physical circuit structure serves multiple voltage generation functions through dynamic switching of series/parallel connections, eliminating the need for separate dedicated charge pump circuits for each voltage level.
Solution Approach 2:
The patent employs dynamic reconfiguration of the charge pump circuit topology using control signals. The charge pump stages can be switched between series and parallel connections during operation, allowing the circuit to adaptively change its output voltage based on operational requirements. This dynamic switching capability enables a single circuit to replace multiple static voltage generator circuits.
3Area of stationary object
If a single charge pump circuit is used to provide multiple voltages, then the chip area is reduced, but the complexity of voltage control increases
Solution Approach 1:
The patent divides the charge pump circuit into multiple independent stages, each capable of being switched between series and parallel connections. This segmentation allows for granular control of the output voltage by selectively activating and connecting specific stages, simplifying the overall control logic compared to managing a monolithic reconfigurable circuit.
Solution Approach 2:
The patent incorporates a detecting circuit that monitors the output voltage levels and generates control signals to regulate the charge pump operation. This feedback mechanism automatically adjusts the switching states of the charge pump stages to maintain stable output voltages, reducing the complexity of external control circuits by providing self-regulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces the number of charge pump circuits needed, minimizing chip area and power consumption while maintaining stable voltage levels for flash memory operations.
Implementation Method 1
each booster stage contains a boost capacitor with a high capacitance
Implementation Method 2
The charge pump stages are identical to one another in circuit configuration, and the number of stages that are connected in series is changed according to a control signal
Data Source
AI summary
A charge pump circuit comprises a first booster set, a second booster group, and a detecting circuit. The first booster set receives a supply voltage and generates a first output voltage. The detecting circuit generates a detecting signal depending on the voltage level of the first output voltage. The second booster group receives the supply voltage and generates the first output voltage or a second output voltage according to the detecting signal. The second booster group is composed of a plurality of booster sets connected in parallel, wherein each booster set comprises a plurality of charge pump stages and a plurality of switch units. The number of serially-connected charge pump stages of each booster set in the second booster group is controlled by the plurality of switch units according to the stable voltage levels of the first and second output voltages.