Rectifying Element with Multi-Layer Silicon Nitride for Sneak Current Suppression
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Solution Overview
Problem
Conventional rectifying elements in programmable logic circuits have suboptimal rectifying characteristics, leading to issues with sneak currents and erroneous writing, and they require a large area and high power consumption.
Innovation Solution
A rectifying element with a structure comprising a first electrode, a first buffer layer, a rectifying layer, a second buffer layer, and a second electrode, where the rectifying layer includes a high nitrogen content silicon nitride layer sandwiched between lower nitrogen content silicon nitride layers, enhancing rectifying characteristics and reducing sneak currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional rectifying elements are used in programmable logic circuits, then the circuit can be implemented, but the rectifying characteristics are suboptimal leading to sneak currents and erroneous writing
Solution Approach 1:
The patent applies local quality by creating a multi-layer silicon nitride structure where each layer has different nitrogen content optimized for specific functions. The first silicon nitride layer has high nitrogen content for superior rectifying characteristics and low leakage current, while the second silicon nitride layer has lower nitrogen content for stress control and interface quality, thereby suppressing sneak currents locally at critical interfaces.
Solution Approach 2:
The patent employs composite materials by combining multiple silicon nitride layers with different nitrogen contents in a single rectifying element structure. This composite approach integrates the advantages of high-nitrogen-content material (low leakage, good rectification) and low-nitrogen-content material (stress management, interface quality) to achieve superior overall performance and eliminate sneak currents.
2Reliability
If conventional rectifying elements are used, then the circuit functions, but the area required is large and power consumption is high
Solution Approach 1:
The patent applies parameter changes by optimizing the nitrogen content parameter in silicon nitride layers to achieve better rectifying characteristics. By controlling nitrogen content during deposition, the patent achieves lower leakage current and improved ON/OFF ratio, which allows for smaller device dimensions and reduced area while maintaining reliability.
3Device complexity
If a single-layer silicon nitride rectifying layer is used, then the structure is simple, but the rectifying characteristics are insufficient
Solution Approach 1:
The patent applies segmentation by dividing the rectifying layer into multiple silicon nitride layers, each with different nitrogen content. The first silicon nitride layer with high nitrogen content provides excellent rectifying characteristics, while the second silicon nitride layer with lower nitrogen content provides stress control and interface quality. This segmentation enables each layer to perform its specific function optimally, achieving superior rectifying characteristics.
Solution Approach 2:
The patent applies local quality by creating a multi-layer silicon nitride structure where each layer has different nitrogen content optimized for specific functions. The first silicon nitride layer has high nitrogen content for superior rectifying characteristics and low leakage current, while the second silicon nitride layer has lower nitrogen content for stress control and interface quality, thereby suppressing sneak currents locally at critical interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed rectifying element increases ON current, maintains high OFF-state resistance, and suppresses sneak currents, enabling a reliable, low-power, and compact programmable logic circuit.
Implementation Method 1
the rectifying layer includes a first silicon nitride layer having a high nitrogen content and second silicon nitride layers having a lower nitrogen content than the first silicon nitride layer
Data Source
AI summary
Provided is a rectifying element that prevents erroneous writing and an erroneous operation and that is substituted for a select transistor; a rewritable semiconductor device that uses a nonvolatile switch including the rectifying element and having excellent reliability, a small area, and low power consumption has a stacked structure of a first electrode 11, a first buffer layer 14, a rectifying layer 13, a second buffer layer 15, and a second electrode 12; and the rectifying layer 13 comprises a first silicon nitride layer 16 having a high nitrogen content (50 atm % or more) and second silicon nitride layers 17A and 17B having a lower nitrogen content than the first silicon nitride layer 16 (50 atm % or less), wherein the second silicon nitride layers 17A and 17B are in contact with the first and second buffer layers (14, 15), respectively, and the first silicon nitride layer 16 is sandwiched between the second silicon nitride layers 17A and 17B.