Redistribution Substrate Package Structure to Prevent Interface Cracking

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Solution Overview

Problem

Existing semiconductor packages face challenges in durability and reliability, particularly in the connection between conductive structures and redistribution substrates, which can lead to cracks and reduced efficiency.

Innovation Solution

A semiconductor package design that includes a first redistribution substrate with conductive structures spaced apart from the semiconductor chip, covered by a molding layer, and a second redistribution substrate connected to these structures, where the second conductive structure is in direct contact with an insulating layer, preventing reaction and crack formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor package structures are used, then manufacturing processes are complex with additional wet etching or baking steps, but durability and reliability are insufficient due to reactions between insulating layer and conductive structures

Engineering Contradiction:
Improvedurability and reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A nickel layer is introduced as an intermediary between the insulating layer and the conductive structure. This nickel layer acts as a barrier that prevents direct contact and potential harmful reactions between the insulating layer and conductive structure, thereby improving reliability without adding complex manufacturing steps

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The nickel layer is formed on the conductive structure before the insulating layer is applied. This preliminary action ensures that the protective barrier is in place before potential harmful interactions can occur, preventing reactions in advance and eliminating the need for subsequent wet etching or baking steps

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If direct contact between insulating layer and conductive structure is allowed, then manufacturing process is simplified, but reactions and cracking occur reducing durability

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoiddurability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The nickel layer serves as a mediator that enables direct contact between the insulating layer and conductive structure without harmful reactions. This intermediary layer maintains manufacturing simplicity while preventing durability issues by blocking chemical interactions

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If additional wet etching or baking steps are performed, then reactions between insulating layer and conductive structures are prevented, but manufacturing process becomes more complex and less efficient

Engineering Contradiction:
ImprovereliabilityVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The nickel barrier layer provides inherent protection against reactions between the insulating layer and conductive structure, eliminating the need for additional wet etching or baking steps. This approach maintains high reliability while improving manufacturing efficiency by reducing process complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protective nickel layer is formed in advance during the conductive structure fabrication process, before the insulating layer is applied. This preliminary protective measure prevents reactions without requiring subsequent complex processing steps, thereby maintaining productivity

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12616075B2Semiconductor package including a semiconductor chip on a redistribution substrate and conductive structure spaced apart from the semiconductor chip
Publication Date: 2026.04.28 SAMSUNG ELECTRONICS CO LTD
  • US12616075B2 patent drawing
  • US12616075B2 patent drawing
  • US12616075B2 patent drawing

AI summary

A semiconductor package includes a first redistribution substrate, a semiconductor chip provided on a top surface of the first redistribution substrate, a conductive structure provided on the top surface of the first redistribution substrate and spaced apart from the semiconductor chip, a molding layer provided on the first redistribution substrate and covering a side surface of the semiconductor chip and a side surface of the conductive structure, and a second redistribution substrate on the molding layer and the conductive structure. The conductive structure includes a first conductive structure provided on the first redistribution substrate, and a second conductive structure provided on a top surface of the first conductive structure. The second redistribution substrate includes an insulating layer. At least a portion of a top surface of the second conductive structure directly contacts the insulating layer of the second redistribution substrate.