Redundant-Area Capacitor Layout for Semiconductor Area Savings
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Solution Overview
Problem
Capacitors in semiconductor devices often occupy unnecessary device area due to their formation in substrate areas, leading to inefficient use of space.
Innovation Solution
A semiconductor device structure and method where capacitors are formed in redundant areas of the substrate, each comprising well regions, dummy gates, and doped regions, with contact plugs for electrical connection, allowing for efficient use of space without occupying device areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If capacitors are formed in the device area of the substrate, then they can be integrated with adjacent components, but they occupy unnecessary device area and must be separated from adjacent components
Solution Approach 1:
The patent extracts the capacitor structure from the device area and relocates it to the redundant area of the substrate. By forming capacitors in the redundant area using well regions and dummy gates, the invention separates the capacitor formation location from the active device area, thereby increasing the effective device area while maintaining integration capability through shared substrate and process compatibility.
2Area of stationary object
If capacitors are separated from adjacent components to avoid occupying device area, then device area is preserved, but integration with adjacent components is reduced
Solution Approach 1:
The patent applies multi-functionality by using the same substrate for both active devices and capacitors. The redundant area of the substrate serves dual purposes: it can be used for capacitor formation while still being part of the overall integrated circuit structure. This allows capacitors to be electrically connected to adjacent components through the substrate, maintaining integration benefits while preserving device area.
3Area of stationary object
If capacitors are formed using well regions and dummy gates in redundant areas, then device area is not occupied, but manufacturing complexity increases
Solution Approach 1:
The patent merges the capacitor structure with existing well regions and dummy gates that are already part of the semiconductor manufacturing process. By utilizing these pre-planned structures in the redundant area, the invention avoids adding entirely new fabrication steps. The capacitors are formed by combining existing well region formation, dummy gate creation, and contact plug fabrication into a unified process flow, thereby reducing manufacturing complexity despite the increased structural sophistication.
Data Source
AI summary
A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first and second capacitors are formed in the respective redundant areas of the substrate, they will not unnecessarily occupy portions of a device area.