Reflective Coating for Optoelectronic Semiconductor Devices

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Solution Overview

Problem

The manufacturing of optoelectronic semiconductor devices often results in high costs due to radiation losses and complex constructions, particularly when using reflective optics to minimize radiation losses.

Innovation Solution

A method involving a reflective coating applied to the carrier and optoelectronic semiconductor chips, with radiation passage areas free of the coating and the coating not projecting laterally beyond the chips, replaces traditional reflective optics, ensuring efficient radiation coupling and a compact design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If traditional reflective optics are used to minimize radiation losses, then radiation efficiency is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improveradiation lossesVSAvoidconstruction complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent extracts the reflective function from complex optical components and applies it directly to the carrier board surface through a reflective coating. This eliminates the need for separate reflective optics while maintaining the radiation reflection function, thereby reducing device complexity and manufacturing cost while minimizing radiation losses.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the physical state and properties of the carrier board by applying a reflective coating that alters its optical parameters. The coating modifies the surface reflectivity to redirect radiation effectively, achieving the function of complex reflective optics through a simple parameter change in the carrier board's surface properties.

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If reflective coating is applied to the entire carrier surface, then radiation reflection is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveradiation lossesVSAvoidcoating application precision
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The patent applies the reflective coating only to specific areas of the carrier board where radiation reflection is needed, rather than the entire surface. This localized application reduces the precision requirements for coating application while still achieving effective radiation reflection at the critical locations near the optoelectronic semiconductor chips.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces radiation losses and increases radiation efficiency while maintaining a cost-effective and simple construction, allowing for the highest possible proportion of electromagnetic radiation to be coupled out from the semiconductor device.

Implementation Method 1

a reflective coating is applied to exposed locations of the carrier and side areas of the optoelectronic semiconductor chips... the reflective coating is reflective at least to the extent of 90%, preferably to the extent of more than 95%, to electromagnetic radiation which impinges on it

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS9406853B2Method for manufacturing at least one optoelectronic semiconductor device
Publication Date: 2016.08.02 OSRAM OLED
  • US9406853B2 patent drawing
  • US9406853B2 patent drawing
  • US9406853B2 patent drawing

AI summary

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.