Reflective Pixel Electrode Structure to Suppress Display Heating

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Solution Overview

Problem

Existing electro-optic devices, such as those disclosed in JP-A-2019-78825, face issues with temperature rise due to low reflectance of titanium nitride in capacitive electrodes, leading to inefficiencies in light management and potential device performance degradation.

Innovation Solution

The electro-optic device incorporates a transistor, a pixel electrode, a first conductive layer with a first film, and a second film with higher light reflectance than the first film, electrically connected through a contact hole and a connecting member, to effectively manage light reflection and reduce temperature rise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a capacitive electrode made of titanium nitride is used, then the device structure is simple and manufacturing is easier, but light reflectance is low causing temperature rise

Engineering Contradiction:
Improveease of manufactureVSAvoidtemperature rise
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The capacitive electrode is constructed as a composite structure with a titanium nitride layer (for electrical conductivity and ease of manufacture) and an aluminum layer (for high light reflectance). This composite material approach combines the advantages of both materials to simultaneously achieve ease of manufacture and high reflectance, thereby preventing temperature rise.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If a capacitive electrode made of titanium nitride is used, then the device structure is simpler, but light management efficiency deteriorates due to low reflectance

Engineering Contradiction:
Improvedevice complexityVSAvoidlight absorption
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The capacitive electrode uses a composite structure combining titanium nitride and aluminum layers. The aluminum layer provides high light reflectance (80% or more) to reduce light absorption and energy loss, while the titanium nitride layer maintains electrical functionality. This resolves the contradiction between device simplicity and light management efficiency.

Inventive Principle:
Principle #40Composite materials

3Temperature

If the light reflectance of the capacitive electrode is increased, then temperature rise is suppressed, but the device structure becomes more complex

Engineering Contradiction:
Improvetemperature riseVSAvoiddevice complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The capacitive electrode is formed as a composite structure with a titanium nitride layer and an aluminum layer deposited thereon. This composite approach achieves high light reflectance (80% or more) to suppress temperature rise while maintaining relatively simple device structure and manufacturing process, thus resolving the contradiction between temperature control and structural simplicity.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration suppresses temperature rise by reflecting a significant portion of incident light, thereby enhancing the performance and reliability of the electro-optic device.

Implementation Method 1

a second film provided between the first film and the pixel electrode and having a light reflectance higher than that of the first film

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS20250133830A1Electro-optic device and electronic device
Publication Date: 2025.04.24 SEIKO EPSON CORP
  • US20250133830A1 patent drawing
  • US20250133830A1 patent drawing
  • US20250133830A1 patent drawing

AI summary

An electro-optic device includes a transistor, a pixel electrode provided corresponding to the transistor, a conducting film serving as a first film provided between the transistor and the pixel electrode, a reflection film provided between the conducting film and the pixel electrode and having a light reflectance higher than that of the conducting film, a relaying layer electrically connected to the pixel electrode through a contact hole extending to the conducting film through the reflection film, and a contact plug serving as a connecting member provided in the contact hole.