Self-Bootstrapping Regenerative Diode Reducing Forward Voltage Drop
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Solution Overview
Problem
Conventional diodes, such as Schottky barrier diodes, suffer from high energy losses due to large forward voltage drops, and synchronous rectifiers, while more efficient, require complex circuitry and additional signal processing, increasing cost and reducing reliability.
Innovation Solution
A regenerative diode structure combining MOSFETs and regenerative building blocks (RBBs) with carefully managed gate oxide thickness and dopant concentration, allowing for automatic switching between ON and OFF states without the need for additional control signals, reducing forward voltage drop and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If Schottky barrier diodes are used for rectification, then the device is simple to use, but the forward voltage drop is large causing high energy loss
Solution Approach 1:
The patent implements positive feedback by connecting the drain of one MOSFET to the gate of the other MOSFET, and vice versa. This feedback mechanism causes the MOSFETs to automatically switch between ON and OFF states based on their drain-source voltage, eliminating the need for external control signals while achieving low voltage drop operation
Solution Approach 2:
The regenerative diode structure is self-controlling through its internal feedback connections. Each MOSFET's gate voltage is automatically generated from the other MOSFET's drain voltage, allowing the device to self-regulate its switching without external controllers or sensors, thus maintaining simplicity while improving efficiency
2Loss of energy
If synchronous rectification with MOSFETs is used, then the voltage drop is reduced improving efficiency, but the circuit implementation becomes more complicated
Solution Approach 1:
The patent uses feedback connections where each MOSFET's drain is connected to the other MOSFET's gate. This automatic feedback mechanism eliminates the need for external controllers, sensors, and complex gate drive circuits, reducing device complexity while maintaining the low voltage drop benefits of synchronous rectification
Solution Approach 2:
The patent extracts and eliminates the complex control circuitry (controllers, sensors, signal processing) from the synchronous rectification system by using only two cross-connected MOSFETs with inherent feedback, retaining only the essential switching function while removing unnecessary complexity
3Loss of energy
If synchronous rectification is used, then efficiency is improved, but additional signal processing increases cost and reduces reliability
Solution Approach 1:
The patent removes all additional signal processing components (controllers, sensors) from the synchronous rectification circuit, leaving only the two cross-connected MOSFETs. This extraction eliminates potential failure points while maintaining efficiency through the inherent feedback mechanism
Solution Approach 2:
The regenerative diode structure is self-controlling through its internal feedback connections. Each MOSFET's gate voltage is automatically generated from the other MOSFET's drain voltage, allowing the device to self-regulate its switching without external controllers or sensors, thus maintaining simplicity while improving efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The regenerative diode achieves improved efficiency and reduced overhead circuitry compared to Schottky diodes and synchronous rectifiers, with simpler fabrication and easier integration, while maintaining high frequency operation and reliability.
Implementation Method 1
depleted of charge carriers by a potential applied to a gate
Implementation Method 2
Self-bootstrapping field effect diode structures and methods
Data Source
Figure 1A~1B
Figure 2
Figure 3
AI summary
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.