ReRAM Set Termination Circuit Prevents Over-Set Damage
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Solution Overview
Problem
Resistive random access memory (ReRAM) cells face challenges in accurately terminating set/reset operations, leading to potential permanent damage due to 'over-set' or 'over-reset' issues, and inefficiencies in the forming operation where slower cells delay faster ones, reducing overall performance.
Innovation Solution
A control circuit with a set termination circuit that monitors voltage variations on the data line to timely terminate set/reset operations, incorporating switches and voltage detectors to prevent over-operation and enhance forming efficiency by automatically switching to the next cell once the operation is complete.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of moving object
If the current is applied to the ReRAM after the resistance state is changed, then the set/reset operation is not terminated in time, but the ReRAM will suffer from over-set or over-reset problem causing permanent damage
Solution Approach 1:
The control circuit monitors the voltage on the data line during set/reset operations and uses this feedback to determine when the operation is complete. When the voltage indicates the resistance state has changed, the control circuit terminates the current application, preventing over-set or over-reset conditions and protecting the ReRAM cell from permanent damage.
2Reliability
If the column multiplexing decoder waits for all ReRAMs on the same column to finish forming operations, then slower cells prevent faster cells from being processed, but this reduces the efficiency of forming operation
Solution Approach 1:
The forming operation is segmented by column, allowing independent processing of each column's ReRAM cells. The control circuit can identify when individual cells have completed forming and switch to the next column without waiting for all cells in a column to finish, thereby improving overall productivity while ensuring each cell receives proper forming treatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The control circuit effectively terminates set/reset operations, preventing damage and reducing power consumption, while improving the efficiency of the forming process by allowing each ReRAM cell to operate independently without waiting for others to finish.
Implementation Method 1
the control circuit terminates set/reset operations based on the voltage variation on the data line
Data Source
AI summary
The present disclosure provides a control circuit of a memory array. The control circuit includes a first switch and a set termination circuit. The first switch is connected between a first voltage source and a data line of a resistive memory cell of the memory array. The set termination circuit has a first terminal connected to a control terminal of the first switch and a second terminal connected to the data line of the resistive memory cell of the memory array. When a data line voltage of the data line decreases to be lower than a first voltage in a first duration of the resistive memory cell performing a set operation, the set termination circuit turns off the first switch to terminate the set operation by stopping providing the first voltage of the first voltage source to the data line.