Radiation-Sensitive Resin Composition for CDU, MEEF, and LWR
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Solution Overview
Problem
Existing radiation-sensitive resin compositions fail to provide sufficient Critical Dimension Uniformity (CDU), Mask Error Enhancement Factor (MEEF), and Line Width Roughness (LWR) properties, especially with next-generation exposing technologies.
Innovation Solution
A radiation-sensitive resin composition using a combination of at least two specific acid generators, represented by certain formulae, to enhance the performance of the polymerization process, and a solvent, to optimize acid diffusion length and acidity synergistically, thereby improving the various resist properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single acid generator is used in the radiation-sensitive resin composition, then the composition can be simple in formulation, but it fails to provide sufficient CDU, MEEF, and LWR properties required for next-generation lithography
Solution Approach 1:
The patent combines multiple acid generators with different molecular structures (specifically compounds of formulas (1) and (2) with different R1, R2, R3 groups) in the radiation-sensitive resin composition. This merging of multiple acid-generating components creates a synergistic effect that simultaneously improves Critical Dimension Uniformity (CDU), Mask Error Enhancement Factor (MEEF), and Line Width Roughness (LWR) properties, resolving the limitation of single acid generator formulations.
Solution Approach 2:
The invention creates a composite acid generator system by formulating a radiation-sensitive resin composition containing multiple specific acid generator compounds. This composite approach, using compounds with different cyclic structures (R1, R2, R3 groups) as defined in formulas (1) and (2), produces enhanced resist properties that neither component achieves alone, particularly improving CDU, MEEF, and LWR for next-generation lithography applications.
2Strength
If hydroxystyrene-based polymer is used to achieve high plasma etching resistance, then etching resistance is improved, but absorption of radioactive ray becomes too strong making it difficult to form desired fine pattern shapes
Solution Approach 1:
The patent changes the chemical structure parameters of the polymer by using compounds with specific cyclic groups (R1, R2, R3 in formulas (1) and (2)) instead of traditional hydroxystyrene-based polymers. This structural parameter change reduces the absorption coefficient of the polymer for extreme ultraviolet radiation, enabling the formation of fine pattern shapes with desired precision while maintaining adequate plasma etching resistance through the combined acid generator system.
3Illumination intensity
If alicyclic structure resin is used as protecting group to reduce absorption, then absorption is reduced, but existing photoacid generators lack sufficient acid intensity for deprotection
Solution Approach 1:
The patent merges alicyclic structure resin with a combination of multiple acid generators (compounds of formulas (1) and (2)) to achieve both low radiation absorption and sufficient acid intensity. The synergistic combination ensures that the acid generators collectively provide enough acid intensity to effect deprotection of the alicyclic protecting groups, while the alicyclic structure itself maintains low absorption of extreme ultraviolet radiation.
Solution Approach 2:
The invention changes the parameters of the acid generating system by selecting specific compounds with particular cyclic structures (R1, R2, R3 groups in formulas (1) and (2)) that, when combined, provide sufficient acid intensity for deprotecting alicyclic groups. This parameter optimization in the acid generator formulation overcomes the limitation of insufficient acid intensity while maintaining the benefits of low-absorption alicyclic resin structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves enhanced CDU, MEEF, and LWR properties, allowing for the formation of high-quality resist patterns.
Implementation Method 1
a radiation-sensitive acid generator; generating an acid by irradiating the coating of the resist composition with a radioactive ray
Implementation Method 2
reacting in the presence of the acid as a catalyst to generate the difference of solubility of a resin into an alkaline or organic developer between an exposed part and a non-exposed part
Data Source
AI summary
A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure; X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).