Radiation-Sensitive Resin Composition for EUV Lithography Outgassing

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Solution Overview

Problem

Current lithography techniques face challenges in achieving high sensitivity, high resolution, and good line edge roughness simultaneously, especially in the ultrafine region, and also suffer from outgassing issues when using EUV light in semiconductor manufacturing.

Innovation Solution

A radiation-sensitive resin composition containing a repeating unit with an ionic structure moiety that produces an acid anion upon irradiation, combined with units capable of decomposing to form alkali-soluble groups and specific molecular structures to enhance performance and prevent outgassing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If higher sensitivity is sought for in electron beam lithography, then wafer processing time is shortened, but resolution deteriorates and line edge roughness worsens

Engineering Contradiction:

Improvewafer processing timeVSAvoidresolution and line edge roughness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the resist system by introducing a novel photoacid generator with specific molecular weight range (500-2000) and specific chemical structure (formula 1). This parameter change enables the system to achieve high sensitivity (lower exposure dose) while maintaining high resolution and good line edge roughness, resolving the trade-off between processing speed and pattern quality

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite resist system combining a specific polymer (polycycloolefin with hydroxyl groups) and a novel photoacid generator. This composite material achieves synergistic effects where the polymer provides structural stability and the photoacid generator provides high sensitivity, simultaneously achieving high sensitivity, high resolution, and good line edge roughness

Inventive Principle:

Principle #40Composite materials

2Device complexity

If conventional photoacid generators are used, then the resist system is simple, but acid diffusibility is poor resulting in poor resolution and line edge roughness

Engineering Contradiction:

Improveresist system simplicityVSAvoidresolution and line edge roughness

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The patent optimizes the molecular weight parameter of the photoacid generator to be in the range of 500-2000, which is higher than conventional low molecular weight photoacid generators. This parameter change improves acid diffusibility while maintaining generation efficiency, achieving both good resolution/line edge roughness and reasonable system complexity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces specific local chemical structures (formula 1) into the photoacid generator with particular functional groups and molecular architecture. This local structural optimization enhances acid release properties and diffusibility in the resist matrix, improving resolution and line edge roughness without requiring complete system redesign

Inventive Principle:

Principle #3Local quality

3Manufacturing precision

If EUV light is used for lithography, then shorter wavelength enables finer patterns, but outgassing occurs causing contamination

Engineering Contradiction:

Improvepattern finenessVSAvoidoutgassing and contamination

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent selects a polycycloolefin polymer with specific molecular weight and hydroxyl group content as the resist base. This parameter optimization ensures the polymer has sufficient thermal stability and low volatility under EUV exposure, minimizing outgassing while maintaining the short wavelength benefits for fine pattern formation

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes the hydroxyl groups in the polycycloolefin polymer to interact with and trap volatile decomposition products generated during EUV exposure. This converts the potential harm of outgassing into a beneficial trapping mechanism, reducing contamination while enabling fine pattern formation with EUV light

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS8852845B2Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin

Publication Date: 2014.10.07 FUJIFILM CORP

AI summary

Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation:wherein each of R1a to R13a independently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.