Resin Composition for High-Resolution Semiconductor Patterning
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Solution Overview
Problem
Current semiconductor microfabrication techniques face challenges in achieving high sensitivity, high resolution, and good pattern profile simultaneously, especially in forming ultrafine patterns with line widths or space widths on the order of tens of nanometers, while also requiring high dry etching resistance.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition containing specific repeating units, such as those represented by formulas (Ab1) and (A), which are exposed and then developed with an organic solvent-containing developer to form negative patterns, enhancing sensitivity, resolution, and dry etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If higher sensitivity is pursued in resist composition, then sensitivity is improved, but pattern profile and resolution are deteriorated
Solution Approach 1:
The patent changes the chemical parameters of the resin by introducing specific repeating units with acid-decomposable groups and carboxyl groups. This modifies the resin's reactivity to acid and polarity changes, enabling high sensitivity while maintaining good pattern profiles and resolution in ultrafine patterns
Solution Approach 2:
The patent uses a composite resin structure combining repeating units with acid-decomposable groups and carboxyl groups. This composite approach allows the resist composition to achieve both high sensitivity and high resolution by leveraging the synergistic effects of different functional groups
2Productivity
If sensitivity is increased for shorter wafer processing time, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent modifies the resin's chemical parameters to increase acid reactivity and polarity change, which enhances sensitivity and allows shorter exposure and processing times while maintaining excellent pattern profiles for isolated line and space patterns
3Manufacturing precision
If ultrafine patterns with tens of nanometer line width are formed, then manufacturing precision is improved, but dry etching resistance becomes insufficient
Solution Approach 1:
The patent changes the resin's chemical composition by incorporating repeating units with acid-decomposable groups and carboxyl groups. This increases the resin's reactivity to acid and polarity change, resulting in excellent dry etching resistance while maintaining high resolution for ultrafine patterns with line widths on the order of tens of nanometers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures high sensitivity, high resolution, and good pattern profile for isolated line and space patterns, along with improved dry etching resistance, particularly in the ultrafine region, by increasing the reactivity of the resin and polarity change associated with acid decomposition, leading to enhanced dissolution contrast and pattern formation.
Implementation Method 1
a chemical amplification positive resist composition composed of, as main components, a phenolic resin having a property of being insoluble or sparingly soluble in an alkali developer but becoming soluble in an alkali developer by an action of an acid
Implementation Method 2
enhancing the polarity change associated with acid decomposition
Data Source
AI summary
There is provided a pattern forming method comprising, in order, (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having specific repeating units, (2) a step of exposing the film by using an electron beam or an extreme-ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.