Resist Composition Acid Generator for Lithography Pattern Fidelity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional acid generators and acid-generating units in resist compositions for advanced lithography techniques, such as ArF excimer laser lithography, do not adequately improve lithography properties like LWR, MEEF, and EL margin, and resist pattern shape.
Innovation Solution
A compound represented by general formula (b1) is used as an acid generator in a resist composition, which includes a divalent linking group, a hydrocarbon group, and an alkyl or alkoxy group, enhancing the resist composition's performance in terms of lithography properties and resist pattern shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used in resist compositions for advanced lithography, then the basic resist formation function is maintained, but lithography properties such as line width roughness, exposure dose latitude, and edge margin are insufficient
Solution Approach 1:
The patent applies parameter changes by modifying the molecular structure of the acid generator compound. Specifically, it introduces a divalent linking group connecting two acid-generating moieties (such as sulfonimide groups) with specific structural parameters (R1 as hydrocarbon group, R2 as alkyl or alkoxy group with 1-5 carbon atoms). This structural parameter optimization enables the acid generator to produce controlled acid amounts during exposure, thereby improving lithography properties including line width roughness and edge margin while maintaining reliable resist pattern formation.
Solution Approach 2:
The patent employs composite material principles by creating a compound that integrates multiple functional units within a single molecular structure. The divalent linking group connects two acid-generating moieties, forming a composite structure that combines the benefits of multiple acid sources. This composite acid generator provides synergistic effects, enhancing acid generation efficiency and controlling acid diffusion, which results in improved lithography properties and better resist pattern shape fidelity simultaneously.
2Measurement precision
If the wavelength of exposure light source is shortened to achieve pattern miniaturization, then resolution is improved, but the requirements for resist material sensitivity and lithography properties become more stringent
Solution Approach 1:
The patent addresses the increased resist material requirements by optimizing the acid generator's molecular parameters. The divalent linking group structure (with R1 hydrocarbon group and R2 alkyl/alkoxy groups of 1-5 carbon atoms) is designed to maximize acid generation efficiency at shorter wavelengths. This parameter optimization enables the resist material to achieve high sensitivity and excellent lithography properties (LWR, MEEF, EL margin) required for advanced pattern miniaturization, thereby meeting stringent performance requirements without increasing material complexity.
3Productivity
If acid generator efficiency is increased to improve sensitivity, then exposure sensitivity is enhanced, but control over acid diffusion and resist pattern shape becomes more difficult
Solution Approach 1:
The patent uses composite material principles to balance acid generation efficiency and diffusion control. The divalent linking group connects two acid-generating moieties in a controlled geometric arrangement (with specific R1 and R2 groups). This composite structure provides spatial control over acid generation sites and limits excessive acid diffusion, enabling high exposure sensitivity while maintaining precise resist pattern shape control. The linked structure acts as a self-regulating system where the two moieties work cooperatively to achieve both high productivity and manufacturing precision.
Solution Approach 2:
The patent applies local quality principles by creating non-uniform acid generation characteristics through the divalent linking group structure. The R1 hydrocarbon group and R2 alkyl/alkoxy groups (1-5 carbon atoms) create specific local chemical environments that modulate acid generation and diffusion locally. This local structural optimization enables enhanced sensitivity in exposed regions while maintaining precise pattern shape control at pattern edges, resolving the contradiction between productivity and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition exhibits improved lithography properties, including reduced line width roughness, modified exposure dose latitude, and enhanced edge margin, resulting in better resist pattern formation and shape fidelity.
Implementation Method 1
an acid is generated from the acid generator component, and the polarity of the base resin increases by the action of the generated acid
Data Source
AI summary
A compound represented by general formula (b1) shown below (in the formula, Y1 represents a divalent linking group; W represents S, Se or I; R1 represents a hydrocarbon group; represents an alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; when W represents I, m+n=2, and when W represents S or Se, m+n=3, provided that m≧1 and n≧0; p represents an integer of 0 to 5; and X− represents a counteranion.