Resist Composition Acid-Labile Groups for EUV Sensitivity
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Solution Overview
Problem
Existing resist compositions used in semiconductor manufacturing, particularly with high-energy rays like EUV radiation, face challenges in achieving improved sensitivity and resolution due to the limited number of photons, leading to demands for effective use in small amounts.
Innovation Solution
A resist composition comprising a polymer with a specific repeating unit, a photoacid generator, and an organic solvent, which enhances sensitivity and resolution by effectively generating acids even at low light doses, thereby improving pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-energy rays (EUV) are used for patterning, then resolution is improved, but the number of photons available is remarkably small, leading to poor sensitivity
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by introducing specific acid-labile protecting groups (acetal, orthoester, carbamate, carbonyl) that modify how the base resin responds to acid generation. This allows the resist to achieve sufficient acid amplification even with limited photon input from EUV radiation, thereby improving sensitivity while maintaining the high resolution enabled by EUV's short wavelength
Solution Approach 2:
The patent creates a composite resist system combining a base resin with specific functional groups, acid-labile protecting groups, and a photoacid generator. This composite structure enables synergistic interaction where the base resin provides structural framework, the functional groups enable acid amplification, and the photoacid generator initiates the chemical reaction, collectively solving the sensitivity problem under EUV illumination
2Quantity of substance
If a photoacid generator is used to generate acid by light reaction, then sensitivity is improved, but the amount of acid generated is insufficient when light dose is small
Solution Approach 1:
The patent incorporates acid-labile protecting groups (acetal, orthoester, carbamate, carbonyl) into the base resin structure in advance. These groups are pre-positioned to undergo rapid deprotection when exposed to acid, creating an acid amplification effect. This preliminary structural preparation enables the system to generate sufficient solubility change even when the initial acid generation from the photoacid generator is limited by low light dose
Solution Approach 2:
The patent modifies the chemical parameters of the base resin by introducing specific functional groups with different acid-labile protecting groups. These groups have varying degrees of acid sensitivity and deprotection rates, allowing optimization of the acid amplification effect. This parameter adjustment enables efficient acid utilization at low light doses, improving sensitivity without requiring increased photoacid generator concentration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition demonstrates improved sensitivity and resolution, enabling effective pattern formation even with limited exposure to high-energy rays, thus addressing the challenges posed by existing technologies.
Implementation Method 1
reacting an acid, which is formed by a reaction between light and a photoacid generator, with the base resin
Implementation Method 2
A chemically amplified resist enables patterning by changing the solubility of a base resin in a developing solution by reacting an acid with the base resin
Data Source
AI summary
Provided are a resist composition and a method of forming a pattern by using the same, the resist composition including a polymer including a first repeating unit represented by Formula 1, a photoacid generator, and an organic solvent:Formula 1 is as defined in the specification.