Resist Composition with Acid-Sensitive Structural Unit for Lithography
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Solution Overview
Problem
Current resist materials face challenges in achieving high resolution and sensitivity for miniaturized patterns in semiconductor and liquid crystal display manufacturing, particularly with the progression to shorter wavelength exposure sources, and struggle with defects like line width roughness that affect the quality of fine semiconductor elements.
Innovation Solution
A resist composition incorporating a polymeric compound with a specific structural unit that changes solubility in response to acid exposure, allowing for the formation of high-quality resist patterns through selective exposure and development, either positively or negatively, depending on the development process used.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional resist materials are used with shorter wavelength exposure sources, then resolution capability is improved, but sensitivity and pattern quality deteriorate due to line width roughness and defects
Solution Approach 1:
The patent modifies the chemical structure of the base resin by introducing specific structural units (formula 1) with adjustable parameters (n=0-3, various R groups) to optimize the balance between resolution and pattern quality. This structural parameter change enables the resist to maintain high resolution while reducing line width roughness
Solution Approach 2:
The patent creates a composite resist system combining the novel base resin (formula 1) with acid generators and optional additives. This composite material approach integrates multiple functional components to simultaneously achieve high sensitivity, excellent resolution, and smooth line widths without defects
2Ease of operation
If base resin exhibits increased polarity by acid action for alkali developing, then solubility in alkali developing solution is improved, but solubility in organic solvent decreases for negative tone developing
Solution Approach 1:
The patent designs the base resin with specific local structural features (formula 1) that provide different solubility characteristics in different developing solutions. The structural units create localized polarity changes upon acid exposure that are optimized for alkali developing while maintaining compatibility with organic solvent systems
Solution Approach 2:
The patent creates a universal base resin structure that can function in both alkali developing and organic solvent developing processes. The resin structure (formula 1) is designed to exhibit appropriate solubility behavior in both developing solution types, enabling the same resist composition to be used for different development modes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enables the formation of resist patterns with improved lithography properties, such as exposure latitude and line width roughness, leading to enhanced pattern quality and reduced defects in miniaturized semiconductor elements.
Implementation Method 1
an acid-generator component (B) which generates acid upon exposure
Implementation Method 2
a base component (A) which exhibits changed solubility in a developing solution under action of acid
Data Source
AI summary
A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of Ra and Rb independently represents a hydrocarbon group which may have a substituent, and Ra and Rb may be mutually bonded to form a ring.