Resist Composition Acid Trapping for Lithography Resolution
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Solution Overview
Problem
Current resist compositions for advanced lithography techniques, such as those using electron beam or EUV, face challenges in achieving high resolution and maintaining excellent lithography properties as resist patterns miniaturize, with existing acid generators not fully addressing the need for improved lithography properties and resist pattern shape.
Innovation Solution
A resist composition incorporating a nitrogen-containing organic compound as a quencher, represented by a specific formula, which works in conjunction with an acid generator to enhance acid diffusion control and improve lithography properties by trapping acid, thereby maintaining uniform acid concentration and optimizing resist pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing acid generators are used in resist compositions, then the resist material can achieve basic lithography functionality, but the lithography properties and resist pattern shape are not fully optimized for advanced miniaturization
Solution Approach 1:
The patent modifies the chemical parameters of the acid generator by introducing a specific structure containing a nitrogen-containing heterocyclic group (such as pyridine, triazine, or carbazole) combined with a leaving group. This structural parameter change enables the acid generator to produce acid more effectively while controlling its diffusion, thereby improving lithography properties and resist pattern shape for advanced miniaturization applications.
Solution Approach 2:
The invention creates a composite acid generator system by combining a nitrogen-containing heterocyclic compound with a leaving group (such as halogen or pseudohalogen). This composite structure allows the acid generator to function effectively in chemically amplified resist compositions, providing both acid generation capability and controlled diffusion characteristics needed for high-resolution lithography.
2Measurement precision
If the wavelength of exposure light source is shortened for pattern miniaturization, then resolution is improved, but the requirements for resist material sensitivity and lithography properties become more stringent
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating a specifically structured acid generator with nitrogen-containing heterocyclic groups. This enables the resist material to maintain high sensitivity and excellent lithography properties when used with shorter wavelength exposure sources like ArF excimer lasers, thereby supporting resolution improvements without sacrificing reliability.
3Manufacturing precision
If acid concentration is increased to improve lithography properties, then resolution and pattern fidelity are enhanced, but acid diffusion control becomes more difficult to maintain
Solution Approach 1:
The nitrogen-containing heterocyclic group in the acid generator acts as an intermediary that facilitates controlled acid release and diffusion. The specific molecular structure serves as a mediator between acid generation and diffusion control, enabling maintained uniform acid concentration distribution even at elevated acid concentrations, thus improving resolution and pattern fidelity without excessive complexity in diffusion control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved lithography properties and resist pattern shape by effectively trapping acid and maintaining uniform acid concentration, leading to enhanced resolution and pattern fidelity even at the nanometer scale.
Implementation Method 1
a nitrogen-containing organic compound component (C) containing a compound (C1) represented by general formula (c1) shown below and an acid generator component (B) which generates acid upon exposure
Implementation Method 2
enhance acid diffusion control and improve lithography properties by trapping acid, thereby maintaining uniform acid concentration
Data Source
AI summary
A resist composition including: a base component (A) which exhibits changed solubility in a developing solution under action of acid; a nitrogen-containing organic compound component (C) containing a compound (C1) represented by general formula (c1) shown below; and an acid generator component (B) which generates acid upon exposure, provided that the compound (C1) is excluded from the acid generator component (B):wherein RN represents a nitrogen-containing heterocyclic group which may have a substituent; X0 represents a linear or branched divalent aliphatic hydrocarbon group of 1 to 10 carbon atoms, a cyclic divalent aliphatic hydrocarbon group of 3 to 20 carbon atoms or a divalent aliphatic hydrocarbon group of 3 to 20 carbon having a cyclic partial structure, or any one of these groups in which some or all of the hydrogen atoms thereof have been substituted with fluorine atoms; and M+ represents an organic cation.