Resist Composition Anti-Scattering Component
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Solution Overview
Problem
Current photoresist technologies face challenges in achieving a balance between resolution and sensitivity, with shorter UV wavelengths providing better resolution but being poorly absorbed, leading to reduced energy supply and increased proximity effects.
Innovation Solution
A resist composition incorporating an anti-scattering component and a secondary electron generator, which can be covalently or datively bonded, to minimize radiation scattering and enhance exposure control, thereby improving both resolution and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If shorter UV wavelengths are used for exposure, then resolution is improved, but sensitivity and energy supply are reduced
Solution Approach 1:
The patent introduces an anti-scattering component as an intermediary substance within the resist composition. This component mediates the interaction between exposure radiation and the resist material by reducing scattering of primary and secondary radiation, thereby improving energy utilization efficiency without requiring a change in exposure wavelength. The anti-scattering component enables better exposure control and enhanced sensitivity while maintaining the resolution benefits of shorter wavelengths.
Solution Approach 2:
The patent modifies the chemical composition parameters of the resist material by incorporating specific anti-scattering components with controlled concentrations (0.1-10 wt%). This parameter change alters the radiation interaction characteristics of the resist, improving energy absorption and reducing scattering effects. The compositional modification enables the resist to maintain high sensitivity and energy supply while utilizing shorter UV wavelengths for high-resolution patterning.
2Manufacturing precision
If shorter UV wavelengths are used for exposure, then resolution is improved, but proximity effects increase
Solution Approach 1:
The anti-scattering component serves as a mediator that controls the distribution and scattering of secondary electrons generated during exposure. By incorporating this component, the patent reduces unwanted radiation scattering that causes proximity effects, while still allowing sufficient energy penetration for high-resolution patterning. This mediates between the need for short wavelength exposure and the need to minimize harmful scattering effects.
3Manufacturing precision
If immersion 193 nm photolithography with sub wavelength technologies is used, then patterning resolution is extended, but patterning time increases
Solution Approach 1:
The patent changes the chemical composition parameters of the resist by incorporating anti-scattering components that enhance radiation interaction efficiency. This compositional modification improves the resist's sensitivity and energy absorption characteristics, enabling faster patterning speeds. The parameter change allows the system to achieve high resolution without requiring extended exposure times associated with immersion photolithography and sub-wavelength technologies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves better exposure control and minimizes proximity effects, allowing for higher resolution patterning and increased aspect ratios while maintaining sensitivity, thus addressing the trade-off between resolution and throughput.
Implementation Method 1
The anti-scattering component serves to reduce scattering (of either or both primary/incident radiation and/or secondary radiation) to thereby provide better exposure control and minimize proximity effects
Implementation Method 2
the developer-solubility of (wavelength/radiation-appropriate) radiation-exposed portions of the composition (or coating thereof) is selectively transformed in contrast to unexposed portions
Implementation Method 3
a secondary electron generator (SEG) which releases secondary electrons upon irradiation
Data Source
AI summary
The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.