Resist Composition for 193nm Lithography Adhesion
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Solution Overview
Problem
In the production of semiconductor and liquid crystal display elements, current resist materials face challenges with pattern miniaturization, adhesion issues to substrates, and increased surface defects, particularly when using ArF excimer lasers, and existing ion implantation processes struggle with transparency and ion masking.
Innovation Solution
A resist composition incorporating a base component with acid-sensitive solubility, an acid generator, and a polymeric compound with specific structural units, optimized for use with exposure wavelengths of 193 nm or less, to improve adhesion and reduce surface defects, and a method for forming resist patterns using this composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist materials are used for pattern miniaturization with ArF excimer lasers, then lithography resolution is improved, but adhesion to substrates deteriorates and surface defects increase
Solution Approach 1:
The patent uses a composite resist material comprising a base resin (acrylic resin with specific structural units) combined with a crosslinking agent and acid generator. This composite formulation provides both the required lithography resolution for 193 nm ArF excimer laser processing and improved adhesion to substrates, resolving the contradiction between resolution and adhesion performance
2Manufacturing precision
If conventional resist materials are used for pattern miniaturization with ArF excimer lasers, then lithography resolution is improved, but surface defects increase
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist material by incorporating specific structural units in the base resin (including hydroxyl-containing groups and cyclic carbonate groups) and optimizing the ratio of crosslinking agent to base resin. These parameter changes reduce surface defects such as scum and foam while maintaining high lithography resolution
3Ease of manufacture
If existing ion implantation processes are used, then ion implantation is achieved, but transparency is reduced and ion masking occurs
Solution Approach 1:
The patent creates a resist pattern with controlled local properties where the resist film provides ion masking in specific regions while maintaining transparency in other areas. The crosslinked structure provides localized ion blocking capability without compromising overall optical transparency, enabling both ion implantation and optical clarity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enhances lithography properties, including pattern shape, LWR, and EL margin, while reducing scum generation and improving adhesion, enabling the formation of high-resolution resist patterns with reduced defects.
Implementation Method 1
an acid generator component (B) which generates acid upon exposure
Implementation Method 2
a base component (A), which exhibits changed solubility in a developing solution under the action of acid
Data Source
AI summary
A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A).In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.