Low Molecular Weight Resist Composition for EUV Lithography
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Solution Overview
Problem
Conventional resist compositions for semiconductor lithography, particularly in ultrafine regions, face challenges with pattern falling and line edge roughness when using molecular resist materials, which affect the resolution and sensitivity, especially under EUV exposure.
Innovation Solution
A resist composition is developed using a low molecular weight polymer with an acid-decomposable group and a compound that generates specific structures upon irradiation, enhancing resolution and reducing line edge roughness, while maintaining high sensitivity and pattern fidelity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a molecular resist material is used to achieve fine pattern formation, then resolution is improved, but line edge roughness increases and pattern falling occurs
Solution Approach 1:
The patent uses a composite material system consisting of a low molecular weight polymer (weight average molecular weight 1,000-5,000) as the binder combined with a chemical amplification-type photosensitive component. This composite approach allows the low molecular weight polymer to provide smooth line edges and high resolution while the chemical amplification mechanism ensures high sensitivity and adequate adhesion, thereby resolving the contradiction between resolution and reliability.
2Manufacturing precision
If a low molecular weight polymer is used to reduce line edge roughness, then resolution is improved, but pattern falling occurs
Solution Approach 1:
The patent changes the molecular weight parameter of the polymer binder to a specific range (1,000-5,000), which is lower than conventional polymers but optimized to balance line edge smoothness and pattern stability. This parameter optimization allows the resin to provide adequate adhesion and reduce pattern falling while maintaining low line edge roughness and high resolution.
3Reliability
If chemical amplification-type resist is used to achieve high sensitivity, then sensitivity is improved, but line edge roughness increases
Solution Approach 1:
The patent creates a composite resist system where a low molecular weight polymer (weight average molecular weight 1,000-5,000) serves as the binder and a chemical amplification-type photosensitive component is added. The low molecular weight polymer provides smooth line edges, while the chemical amplification component delivers high sensitivity, thus resolving the contradiction between sensitivity and line edge roughness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces pattern falling and line edge roughness, achieving high resolution and sensitivity in ultrafine regions during EUV exposure, thereby improving the overall performance of semiconductor device processing.
Implementation Method 1
a compound which generates a compound having a specific structure upon irradiation with actinic rays or radiation
Implementation Method 2
having a group capable of decomposing under the action of an acid and having a weight average molecular weight of 1,000 to 5,000, of which solubility in an alkali developer increases under the action of an acid
Data Source
AI summary
A resist composition containing: a polymer having a group capable of decomposing under an action of an acid and having a weight average molecular weight of from 1,000 to 5,000, of which solubility in an alkali developer increases under an action of an acid; and a compound capable of generating a compound having a structure represented by the following formula (A-I) upon irradiation with actinic rays or radiation:Q1-X1—NH—X2-Q2 (A-I)wherein Q1 and Q2 each independently represents a monovalent organic group, provided that either one of Q1 and Q2 has a proton acceptor functional group, Q1 and Q2 may be combined with each other to form a ring and the ring formed may have a proton acceptor functional group; and X1 and X2 each independently represents —CO— or —SO2—.