Resist Composition for Fine Hole Pattern Dimensional Control
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Solution Overview
Problem
Current negative tone pattern forming processes using organic solvent development suffer from low dissolution contrast between exposed and unexposed regions, leading to poor control over pattern size and increased risk of pattern collapse, especially when forming fine hole patterns.
Innovation Solution
A resist composition comprising a polymer with recurring units derived from (meth)acrylate monomers having tertiary ester groups with multiple methyl and/or ethyl groups on an alicycle, which enhances dissolution contrast and sensitivity through improved solubility in organic solvents, preventing pattern collapse and bridging during development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for negative tone pattern formation, then the process is simple, but the dissolution contrast is low leading to poor pattern control
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific polymer structures (polyester, polyacrylonitrile, polyvinylidene fluoride) with controlled molecular weights and ratios. This parameter change increases the dissolution contrast between exposed and unexposed regions, enabling precise pattern size control while maintaining process simplicity.
Solution Approach 2:
The patent uses a composite resist composition combining multiple polymer components (polyester 30-70 parts, polyacrylonitrile 20-50 parts, polyvinylidene fluoride 10-30 parts) with specific acid labile groups. This composite material achieves high dissolution contrast and sensitivity, resolving the contradiction between precision and ease of manufacture.
2Productivity
If organic solvent development is used, then the process is efficient, but pattern collapse and bridging occur due to low dissolution contrast
Solution Approach 1:
The patent modifies the resist composition parameters by introducing specific polymer structures with controlled solubility characteristics. This enables the resist to maintain high dissolution contrast during organic solvent development, preventing pattern collapse and bridging while preserving development efficiency.
Solution Approach 2:
The patent incorporates acid labile groups that undergo deprotection upon exposure, creating a preliminary protective action that prevents pattern collapse and bridging during the development process. The exposed regions are pre-treated to resist dissolution, maintaining pattern integrity.
3Measurement precision
If fine hole patterns are formed, then the resolution is high, but the risk of pattern collapse increases
Solution Approach 1:
The patent optimizes the molecular weight and composition parameters of the resist polymers to achieve high dissolution contrast. This parameter optimization enables formation of fine hole patterns with high resolution while the enhanced contrast prevents pattern collapse, maintaining reliability.
Solution Approach 2:
The patent replaces mechanical support structures with a chemically enhanced resist system that uses molecular-level dissolution contrast to maintain pattern stability. The chemical mechanism of selective dissolution provides the structural integrity needed for fine patterns without relying on mechanical support.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high dissolution contrast and sensitivity, enabling the formation of fine hole or trench patterns with improved dimensional control and reduced risk of pattern defects during organic solvent development.
Implementation Method 1
deprotection reaction with the aid of acid and heat
Implementation Method 2
developing the exposed film in an organic solvent-based developer to form a negative pattern wherein the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved
Data Source
AI summary
A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.