Photosensitive Materials TRIZ Cases

A radiation-sensitive printing plate composition uses photopolymerization to form images with neutral pH developers.

A negative photosensitive material uses a specific polyimide precursor and pyridine derivative to form precise patterns on suspension boards.

A resist composition uses two specific resin units to enable acid-triggered solubility changes during pattern development.

A fluorinated polymer with specific recurring units forms a chemically amplified resist composition transparent to 193 nm light.

Removing trace metals and free acid radicals from a polymer solution yields a stable photoresist composition resistant to airborne chemical contaminants.

A hydrogenated ring-opening metathesis polymer with alicyclic structures enhances alkali developer affinity and transparency.

Segmented polymer layers resolve reflectivity control and developer wetability contradictions in immersion lithography.

Blue dye-functionalized acryl resin cures into ultra-fine square patterns, eliminating residue on unexposed areas while maintaining heat resistance.

A colored photosensitive resin composition uses specific photoinitiators to fabricate high-resolution micro-patterned patterns.

Cross-linked acrylic resin resists strippers to eliminate extra processes, boosting aperture ratio and contrast in liquid crystal displays.

Modifying the molecular structure of oxime ester compounds resolves the contradiction between high sensitivity and visible region transmittance.

Cyclic acetal groups in the polymer change solubility during immersion lithography, preventing dissolution in water before development.

A photocurable composition uses a salt of a carboxylic acid and a basic compound to generate a base upon irradiation.

A positive resist composition incorporates specific recurring units to manage acid movement during lithography processing.

Self-crosslinking linear polymers resolve dry etching rate and solvent resistance trade-offs in ArF lithography.

Tertiary ester groups on an alicycle in the polymer increase dissolution contrast, preventing pattern collapse and bridging during fine hole formation.

Highly functional urethane methacrylates improve cross-sectional shape accuracy and lower linear thermal expansion coefficients in protective films.

A fluorinated resin photoresist composition with acid-labile groups enables controlled solubility in alkali solutions.

A lithographic printing plate precursor uses a star polymer with sulfide bonds for efficient neutral aqueous development.

A water-insoluble protective coating material enables simultaneous development and stripping in immersion lithography.

Linear polymer with 2,4-dihydroxy benzoic acid backbone manages optical properties and dry etching rates for rectangular resist patterns.

A planographic printing plate precursor uses an epoxy resin backcoat layer to prevent surface scratching during direct stacking.

Fluorinated resist composition improves line edge roughness and minimizes defects via acid-triggered solubility changes.

A resist lower layer film-forming composition incorporates a polymer with a cyclic carbonate structure to improve adhesion and radiation absorbency.

A positive resist composition uses an alcohol-based organic solvent with a boiling point of at least 150°C to dissolve base and acid-generator components.

Siloxane-bonded photoresist cures at 200°C or less, preventing flexible substrate deformation and preserving dye-based coloring agents.

A protective coating composition comprising a copolymer of alkali-soluble (α-trifluoromethyl)acrylate and norbornene derivatives applied to resist films.

Alkali-soluble polymer coating prevents water dissolution during exposure while enabling simultaneous stripping and development to reduce process complexity.

A multilayer photochromic article uses a substrate and an intermediate layer to enhance optical density.

Photocurable perfluoropolyether materials replace PDMS to eliminate organic solvent swelling while maintaining mechanical stability.

A naphthol-dicyclopentadiene copolycondensate undercoat layer provides antireflective properties at 193 nm wavelengths.

Modified norbornane lactone resin reduces development defects and improves line width uniformity.

A negative photosensitive fluorinated aromatic resin composition enables precise pattern formation through controlled condensation reactions.

A radiation-sensitive resin composition uses a mixed solvent and acid diffusion controller to manage acid generation.

Continuous radical polymerization with controlled initiator and monomer concentrations suppresses oligomer formation in low molecular weight resist copolymers.

A chemically amplified positive resist composition uses a siloxane thermal crosslinker to form cured patterns with high sensitivity and resolution.

Boron powder prevents copper oxidation during air firing, enabling low cost production of electrodes with resistivity comparable to silver.

An aromatic organic solvent in the resist composition reduces line width roughness while maintaining high resolution for ArF lithography.

Composite aromatic-aliphatic polymer structure provides etching selectivity and multiple etch resistance without acid contamination.

A modified poly-p-hydroxystyrene resin enables fast cationic photopolymerization and high viscosity for thick film formation.

A polysiloxane underlayer composition stabilizes film properties through controlled hydrolysis and condensation polymerization.

A photosensitive resin composition prevents aggregate formation during aqueous alkali development.

Dynamic hydrophobic-to-hydrophilic transitions in fluorine-containing resists reduce substance elution and pattern defects during immersion lithography.

A chemical amplification resist film uses nitrogen-containing polycyclic aromatic structures to form high-resolution patterns.

A curable composition uses a binder resin with acid groups to improve adhesiveness and sensitivity.

Filtration of lithography resist composition through a filter installed in a vessel kept under reduced pressure.

Lactone-containing polymer additive lowers resist film contact angle to prevent immersion lithography water penetration and profile changes.