Resist Lower Layer Film Composition for Semiconductor Pattern Resolution
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Solution Overview
Problem
Current semiconductor device production processes face challenges in forming fine patterns due to diffused reflection and standing waves when using short-wavelength radiation, requiring an effective resist lower layer film that exhibits high etching selectivity and pattern collapse resistance.
Innovation Solution
A resist lower layer film-forming composition incorporating a polymer with a cyclic carbonate structure, which includes specific structural units for improved etching rate, adhesion, and radiation absorbency, along with a crosslinking agent to prevent intermixing with the resist film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a resist lower layer film is formed using conventional organic resist lower layer film-forming compositions, then the film can be formed without requiring a special vacuum deposition system, but the etching selectivity ratio and pattern collapse resistance are insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the resist lower layer film-forming composition by incorporating a polymer with specific structural units (cyclic carbonate structure, hydroxyl group, and aromatic ring) to achieve both ease of formation and high etching selectivity ratio
Solution Approach 2:
The patent creates a composite material system combining a polymer with multiple functional groups (cyclic carbonate structure, hydroxyl group, aromatic ring) to simultaneously achieve good adhesion, high etching selectivity ratio, and pattern collapse resistance
2Manufacturing precision
If the resist lower layer film is made with higher light absorbance to reduce diffused reflection, then pattern resolution improves, but the film may undergo intermixing with the resist film during application or heating
Solution Approach 1:
The patent assigns different functional properties to different parts of the polymer structure: the aromatic ring provides light absorbance for reduced diffused reflection, while the hydroxyl group and crosslinking capability provide resistance to intermixing with the resist film
Solution Approach 2:
The patent introduces a crosslinking agent as an intermediary substance that forms crosslinks between polymer chains, creating a stable network structure that prevents intermixing with the resist film while maintaining the light-absorbing properties needed for pattern resolution
3Stability of the object's composition
If the resist lower layer film has high adhesion to prevent pattern collapse, then pattern stability improves, but the etching rate may be reduced
Solution Approach 1:
The patent creates local quality differentiation within the polymer structure where the cyclic carbonate structure and hydroxyl group provide adhesion and pattern collapse resistance, while the overall composition maintains high etching rate through controlled crosslinking and appropriate molecular structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a high etching selectivity ratio and pattern collapse resistance, enabling the formation of finer patterns with improved adhesion and radiation absorbency, suitable for advanced semiconductor device production.
Implementation Method 1
a resist lower layer film-forming composition that forms a resist lower layer film that exhibits a high etching selectivity ratio when forming a pattern by dry etching, implements a high etching selectivity ratio with respect to the resist film, and exhibits high pattern collapse resistance
Implementation Method 2
a resist lower layer film-forming composition that forms a resist lower layer film that exhibits a high etching selectivity ratio when forming a pattern by dry etching, implements a high etching selectivity ratio with respect to the resist film
Data Source
AI summary
A resist lower layer film-forming composition includes (A) a polymer that includes a cyclic carbonate structure. The polymer (A) includes a structural unit (I) shown by the following formula (1).