Chemical Amplification Resist Film for High-Resolution Patterning

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Solution Overview

Problem

Current resist compositions used in microfabrication and ultramicrolithography face challenges in forming high-resolution, high-sensitivity patterns with small line edge roughness and good dry etching resistance, especially when exposed to electron beams or extreme ultraviolet rays, due to issues like electron scattering and backscattering, which affect pattern resolution and stability.

Innovation Solution

A chemical amplification type resist composition is developed, featuring a high molecular compound with a specific structure where a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by a specific formula, combined with a compound generating acid upon irradiation and an organic solvent, forming a resist film with a thickness of 10 to 200 nm, optimized for use with electron beams or extreme ultraviolet rays.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the resist film thickness is reduced to form ultrafine patterns, then the pattern collapse problem is prevented, but the dry etching resistance is lowered

Engineering Contradiction:

Improvepattern formation precisionVSAvoiddry etching resistance

Core Design Contradiction:

Manufacturing precisionVSStrength

Solution Approach 1:

The patent changes the chemical composition parameters of the resist film by introducing specific resin components (polycyclic aromatic hydrocarbons with nitrogen-containing groups) and adjusting the molecular weight distribution. This allows achieving both thin film formation (10-200 nm) for ultrafine patterns and sufficient dry etching resistance through enhanced chemical stability and cross-linking density.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite resin systems combining polycyclic aromatic hydrocarbon backbones with nitrogen-containing functional groups, acid generators, and cross-linking agents. This composite structure provides both the thin-film capability for high-resolution patterning and the chemical resistance needed for dry etching processes.

Inventive Principle:

Principle #40Composite materials

2Manufacturing precision

If the acceleration voltage of electron beam is increased to reduce electron scattering effects, then the forward scattering is reduced, but the electron energy capture rate decreases and sensitivity is lowered

Engineering Contradiction:

Improvepattern resolutionVSAvoidelectron energy capture rate

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent modifies the resist's energy absorption characteristics by incorporating high-Z elements and adjusting the molecular composition to optimize electron interaction. This enables efficient energy capture even at higher acceleration voltages, maintaining sensitivity while reducing scattering effects through optimized electron-resist interactions.

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If the acceleration voltage of electron beam is increased, then the forward scattering is reduced, but the back scattering effect increases and resolution of isolated patterns decreases

Engineering Contradiction:

Improvepattern resolutionVSAvoidback scattering effect

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent introduces a specially designed resist composition with nitrogen-containing polycyclic aromatic structures that act as an intermediary layer. This composition optimizes electron energy distribution and reduces backscattering effects by providing controlled electron interaction pathways, thereby improving isolated pattern resolution even at higher acceleration voltages.

Inventive Principle:

Principle #24Intermediary (Mediator)

4Manufacturing precision

If conventional resins with phenolic hydroxyl groups are used, then the resist film can be formed with conventional thickness, but the line edge roughness and pattern profile are not optimized

Engineering Contradiction:

Improvepattern formation capabilityVSAvoidline edge roughness

Core Design Contradiction:

Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent systematically changes the molecular structure parameters by replacing conventional phenolic hydroxyl groups with nitrogen-containing polycyclic aromatic structures. This structural modification leads to reduced line edge roughness and improved pattern profile through enhanced molecular packing and reduced polymer chain mobility during exposure and development.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS8614033B2Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition

Publication Date: 2013.12.24 FUJIFILM CORP

AI summary

A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm.wherein, R1 represents a hydrocarbon group, R2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.