Resist Composition for EUV Lithography Resolution
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Solution Overview
Problem
Current lithography techniques face challenges in achieving high resolution and smoothness of resist patterns while maintaining excellent lithography characteristics, particularly with the advancement of miniaturization and the need for improved acid diffusion control in EUV and EB lithography.
Innovation Solution
A resist composition is developed that includes a resin component with a constitutional unit derived from a compound represented by Formula (a0-1), which generates an acid upon exposure, changing its solubility in a developing solution, thereby improving resolution and roughness by balancing various lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators with standard anion structures are used, then the resist composition maintains good lithography characteristics, but acid diffusion control is insufficient and resolution is limited
Solution Approach 1:
The patent changes the chemical structure parameters of the acid generator by introducing fluorinated aromatic hydrocarbon groups and specific anion structures (Formula 1) to control acid diffusion. The fluorinated groups and rigid aromatic structures reduce acid mobility while maintaining generation efficiency, directly addressing the resolution vs. acid diffusion contradiction.
Solution Approach 2:
The patent uses composite resin systems combining acrylic resins with cyclic carbonate groups and carboxyl groups in specific ratios. This composite approach allows the resist to benefit from both the high sensitivity of acrylic resins and the acid diffusion control provided by the cyclic carbonate structures, resolving the contradiction between sensitivity and resolution.
2Length of moving object
If the resist pattern size is miniaturized, then higher integration is achieved, but maintaining excellent lithography characteristics and smoothness becomes difficult
Solution Approach 1:
The patent introduces constitutional units with specific local structures (Formula a0-1 with cyclic carbonate groups) that locally control acid diffusion and polymer chain packing. These localized structural modifications ensure smooth pattern formation even at miniaturized dimensions by controlling the local chemical environment during development.
Solution Approach 2:
The patent adjusts the molecular weight and compositional ratios of the resin components to optimize performance at smaller pattern sizes. By changing these parameters, the resist maintains adequate film thickness and acid diffusion control even when pattern dimensions are reduced, preserving smoothness and lithography characteristics.
3Manufacturing precision
If the wavelength of exposure light is shortened, then higher energy and better resolution are achieved, but controlling acid diffusion and maintaining lithography characteristics becomes more difficult
Solution Approach 1:
The patent modifies the acid generator structure with fluorinated aromatic groups that have high absorption cross-sections for short-wavelength EUV light. This parameter change enables efficient acid generation at 13.5nm wavelength while the specific anion structure simultaneously controls acid diffusion, maintaining reliable lithography characteristics despite the shorter wavelength.
Solution Approach 2:
The patent combines multiple resin components with complementary functions: acrylic resins for high sensitivity to short-wavelength exposure, cyclic carbonate components for acid diffusion control, and carboxyl-containing resins for solubility control. This composite material approach ensures all lithography characteristics remain reliable when using high-energy short-wavelength exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively enhances the resolution and smoothness of resist patterns, achieving better development contrast and sensitivity, especially in EUV and EB lithography, by altering the polarity of the resin component in response to acid exposure.
Implementation Method 1
a resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid
Implementation Method 2
a constitutional unit (a1) containing an acid decomposable group whose polarity is increased due to the action of the acid
Data Source
AI summary
A resist composition including a resin component whose solubility in a developing solution is changed due to the action of the acid, in which the resin component has a constitutional unit derived from a compound represented by Formula (a0-1) and a constitutional unit containing an acid decomposable group whose polarity is increased due to the action of the acid. In the formula, W represents a polymerizable group-containing group, Ya0 represents a carbon atom, Xa0 represents a group that forms a monocyclic aliphatic hydrocarbon group together with Ya0, some or all hydrogen atoms in the monocyclic aliphatic hydrocarbon group may be substituted with substituents, and Ra00 represents an aromatic hydrocarbon group which may have a substituent.